Novatel Communications Ltd.

Ronald P Green

Russell E Braathen

Clement H Li

An improved circuit for controlling the output power level of a radio frequency (RF) amplifier is disclosed. The circuit samples the output of an RF amplifier. The sample is amplitude modulated at a preselected modulation frequency and is passed to a detector. In repsonse to the amplitude modulated signal, the detector produces a signal whose amplitude is indicative of the RF amplifier's output power and whose frequency is the modulation frequency. The amplitude of the signal produced by the detector is then compared to a reference amplitude and the difference (error signal) is used to control the gain of the RF amplifier.

RF power-control circuit

An improved circuit for controlling the output power level of a radio frequency (RF) amplifier is disclosed. The circuit samples the output of an RF amplifier. The sample is amplitude modulated at a preselected modulation frequency and is passed to a detector. In response to the amplitude modulated signal, the detector produces a signal whose amplitude is indicative of the RF amplifier's output power and whose frequency is the modulation frequency. The amplitude of the signal produced by the detector is then compared to a reference amplitude and the difference (error signal) is used to control the gain of the RF amplifier.

A controlled-output amplifier is provided whose output power level may be set to any of a number of predetermined levels and maintained substantially constant. The amplifier includes a detector which senses the output power level and produces a signal indicative of the magnitude thereof. The detector includes a single detector diode which may be biased to any of a number of preselected bias states by a bias control unit. The bias control unit increases the dynamic range of the detector diode while eliminating the need for a conventional temperature compensation diode.

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Calgary, Canada

Ronald P Green