Axcelis Technologies, Inc.

Ronald N Reece

Serguei Kondratenko

Michael A Graf

Shu Satoh

John F Baggett

Brian S Freer

Andy M Ray

Louis P Wainwright

Gary N Cai

Thomas Parrill

Petros Miltiades Kopalidis

Geumjoo Ra

A thermal chuck selectively retains a workpiece on a clamping surface. The thermal chuck has one or more heaters to selectively heat the clamping surface and the workpiece. A thermal monitoring device determines a temperature of a surface of the workpiece when the workpiece resides on the clamping surface, defining one or more measured temperatures. A controller selectively energizes the one or more heaters based on the one or more measured temperatures. The thermal monitoring device may be one or more of a thermocouple or RTD in selective contact with the surface of the workpiece and an emissivity sensor or pyrometer not in contact with the surface. The thermal chuck can be part of an ion implantation system configured to implant ions into the workpiece. The controller can be further configured to control the heaters based on the measured temperatures.

In-situ wafer temperature measurement and control

An ion implantation system is provided having an ion implantation apparatus configured to provide a spot ion beam having a beam density to a workpiece, wherein the workpiece has a crystalline structure associated therewith. A scanning system iteratively scans one or more of the spot ion beam and workpiece with respect to one another along one or more axes. A controller is also provided and configured to establish a predetermined localized temperature of the workpiece as a predetermined location on the workpiece is exposed to the spot ion beam. A predetermined localized disorder of the crystalline structure of the workpiece is thereby achieved at the predetermined location, wherein the controller is configured to control one or more of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature of the workpiece at the predetermined location on the workpiece.

Implant-induced damage control in ion implantation

A contamination mitigation or surface modification system for ion implantation processes includes a gas source, a controller, a valve, and a process chamber. The gas source provides delivery of a gas, be it atmospheric or reactive, to the valve and is controlled by the controller. The valve is located on or about the process chamber and controllably adjusts flow rate and/or composition of the gas to the process chamber. The process chamber holds a target device, such as a target wafer and permits interaction of the gas with an ion beam to mitigate contamination of the target wafer and/or to modify the existing properties of the processing environment or target device to change a physical or chemical state or characteristic thereof. The controller selects and adjusts composition of the gas and flow rate according to contaminants present within the ion beam, or lack thereof, as well total or partial pressure analysis.

Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases

The present invention facilitates semiconductor device fabrication by monitoring and correcting angular errors during ion implantation procedures via an incident ion beam angle detector. Additionally, the present invention facilitates semiconductor device fabrication by calibrating a process disk with respect to an incident ion beam without measuring implantation results on wafers prior to an ion implantation process.

Ion beam incident angle detector for ion implant systems

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Westwood, MA, United States of America

Ronald N Reece