U.S. Philips Corporation

Nxp B.v.

Liquavista B.v.

Koninklijke Philips Electronics N.v.

Ronald Martin Wolf

Pieter Jan Van Der Zaag

Lambertus Postma

Jacobus J M Ruigrok

Wiepke Folkerts

Johannes F M Cillessen

Marcus Antonius Verschuuren

Bokke Johannes Feenstra

Paul Van Der Sluis

Robert Andrew Hayes

Johan Marra

Martijn Henri Richard Lankhorst

Theo Arnold Kop

Marcellinus P Krijn

Leendert Marinus Hage

Paulus W Blom

Ivo G J Camps

Hans Van Sprang

Lucas J M Schlangen

Pascal Jh Bloemen

Johannes B Aan De Stegge

Ewout V Morks

Patrice G C Jaulneau

Jan De Graff

A cooling device for cooling a light-emitting semiconductor device, such as a LED device (), comprises a ceramic plate () having coolant-conveying channels () incorporated therein. The ceramic plate () is adapted for forming an integral part of the optical system of the light-emitting semiconductor device () and to cool a light-emitting portion () of the light-emitting semiconductor device (). A method of forming a cooling device comprises the steps of forming a charge of ceramic particles, embossing the charge with a stamp to form coolant-conveying channels in the charge, hardening the charge, and providing a cover on top of the channels to seal them.

Cooling device for a light-emitting semiconductor device and a method of manufacturing such a cooling device

An optical switch, e.g., a display device based on layer break up or layer displacement having at least two different states, in which one of the fluids, e.g., oil in a first state, adjoins at least a first support plate and, in the second state, the other fluid at least partly adjoins the first support plate, in which picture elements are separated by areas having a hydrophilic surface.

Display device

The invention relates to a ferroelectric device () with a body () comprising a substrate () and a ferroelectric layer () provided with a connection conductor () on a side facing away from the substrate (), which ferroelectric layer contains an oxygen-free ferroelectric material () and is used to form an active electrical element (), in particular a memory element (). Such a device forms an attractive non-volatile memory device. In accordance with the invention, a conductive layer () is present between the substrate () and the ferroelectric layer (), which conductive layer forms a further connection conductor () of the ferroelectric layer (), and the active electrical element () is obtained as a result of the fact that the ferroelectric layer () forms a Schottky junction with at least one of the connection conductors (). In practice it has been found that such a device () comprises a well-performing memory element () that can be readily formed on a, preferably monocrystalline, silicon substrate (). Preferably, the device () further comprises a field effect transistor (), and the element () is preferably situated above the source or drain region () of the transistor (). The active element also may function as a diode.

Method of manufacturing a ferroelectric device

Thin-film magnetic head having a head face (,) and comprising a magnetoresistive element (,) oriented transversely to the head face and a flux-guiding element (,) of a magnetically permeable material terminating in the head face. A peripheral area (,) of the magnetoresistive element extending parallel to the head face is present opposite the flux-guiding element for forming a magnetic connection between the magnetoresistive element and the flux-guiding element. The flux-guiding element and the peripheral area of the magnetoresistive element constitute a common magnetic contact face (,), while the magnetically permeable material of the flux-guiding element is electrically insulating.

Method of manufacturing a magnetic head

Thin-film magnetic head and method of manufacturing the magnetic head

A magneto-optical recording medium comprising a substrate and a recording layer, the recording layer comprising a bilayer structure consisting of a first layer on which a magnetic second layer is deposited, the second layer demonstrating perpendicular magnetic anisotropy and a saturation remanence of at least 90%, whereby the magnetic material of the second layer comprises an oxide of iron, and the first layer comprises an oxidic material whose in-plane lattice parameter differs from that of the magnetic material, the growth of the second layer upon the first layer being at least locally epitaxial.

Magneto-optical recording medium

The invention relates to a tunnel diode provided with two metallically conducting electrodes (1, 2) with an insulating dielectric (3) in between, which forms a barrier with a barrier level for electrons and which has a thickness such that electrons can tunnel through the barrier from the one to the other electrode. Such a tunnel diode has the disadvantage that it has no memory. In many applications it is desirable for the tunnel diode to hold a certain switching state, such as open/closed. According to the invention, the tunnel diode is characterized in that the dielectric (3) comprises a layer of a material which is ferroelectric at room temperature with a remanent polarization which influences the barrier level. It is achieved thereby that the tunnel diode has various switching states in dependence on the remanent polarization of the dielectric (3). The switching state is maintained until the polarization of the dielectric (3) changes.

Tunnel diode with several permanent switching states

Growing community of inventors

Eindhoven, Netherlands

Ronald Martin Wolf