Koninklijke Philips Corporation N.v.

U.S. Philips Corporation

Philips Electronics North America Corporation

Ronald M Wolf

Paulus W Blom

Pieter Jan Van Der Zaag

Jacobus Bernardus Giesbers

Jose Azevedo

Marcellinus P Krijn

Glenn Richard Skutt

Johannes F Cillessen

Liming Ye

A planar magnetic winding structure such as a transformer or inductor having an air gap in the core has a &ldquo;keep away&rdquo; region of 2 to 3 times the gap height in which there are no windings, reducing high frequency winding losses by 35 percent or more, without appreciable increases in low frequency winding losses. Such structures are useful, for example, in electronic ballasts for the lighting industry.

Low profile magnetic component with planar winding structure having reduced conductor loss

A planar magnetic device with vertically oriented coil windings having a cross-section of a core with a torroidally-shaped winding structure taken transverse to the plane of the winding structure having two adjacent &ldquo;winding windows&rdquo; where the coils are present. One or more gaps in the core materials surrounding the windings store most of the energy generated by the inductor. The gap of height of at least one half the height of the winding structure is confined to the area between the winding cross-sections. Furthermore, in another aspect of the invention the gap is filled with a multi-layer structure of an alternating mono-layer of equally sized ferrite particles and a layer of synthetic resin.

Planar magnetic device without center core leg

A high-leakage planar magnetic component such as an inductor, having a winding structure in which flat winding turns are oriented transverse to the plane of the winding structure, exhibits significantly lower winding losses than components having a stacked arrangement of flat winding turns parallel to the plane of the winding structure. A dense winding structure having such a transverse orientation can readily be made by forming a flat conductor into a coil using conventional wire winding techniques.

Planar magnetic component with transverse winding pattern

A low profile magnetic component such as an inductor or transformer includes a core and a planar magnetic winding body having a dense, rigid structure composed of a stack of individual winding patterns separated by insulating layers, and a binder/filler material. The input and output termini of the individual winding patterns are revealed in a side face of the winding body, where they are interconnected with a plated metallization. Such structures may be mounted onto a PC board, and are useful, for example, in electronic ballasts for the lighting industry.

Planar winding structure and low profile magnetic component having reduced size and improved thermal properties

A semiconductor device includes a transparent switching element (1) with two connection electrodes (2, 3) of a transparent material and an interposed transparent channel region (4) of a semiconductor material provided with a transparent gate electrode (5) of a conductive material, separated from the channel region (4) by a transparent insulating layer (6). The semiconductor material is a degenerate semiconductor material with a basic material having a bandgap (10) between conduction band (11) and valence band (12) of electrons greater than 2.5 eV and a mobility of charge carriers greater than 10 cm.sup.2 /Vs provided with dopant atoms which form a fixed impurity energy level (13) adjacent or in the valence band (12) or conduction band (11) of the basic material. The degenerate semiconductor material is transparent because the absorption of visible light is not possible owing to the great bandgap (10), while also no absorption of visible light takes place through the impurity energy levels (13). The device is capable of comparatively fast switching.

Semiconductor device having a transparent switching element

A switching element is provided with two electrodes (1, 2) with a semiconducting dielectric (3) therebetween, one electrode (2) having a material which forms a Schottky contact with the semiconducting dielectric (3), while a space charge region (3') of the Schottky contact forms a tunnelling barrier for electrons during operation. It is desirable in many applications for the switching element to hold a certain switching state, such as open or closed, during a longer period. The switching element may then be used, for example, as a memory element. The dielectric (3) includes a ferroelectric material with a remanent polarization which influences a dimension of the tunnelling barrier. In this manner the switching element has various switching states depending on the remanent polarization of the dielectric (3). These switching states are held until the polarization of the dielectric (3) changes.

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Katonah, NY, United States of America

Ronald M Wolf