Nxp B.v.

Ronald Koster

John Joseph Hug

Adrianus Van Bezooijen

Rob Mathijs Heeres

Christophe Chanlo

Dmitry Pavlovich Prikhodko

Niels Kramer

A detection circuit for detecting the output power of a power amplifier comprises a first current minor transistor (Ti) having a base, which is connectable to a power transistor (T), and a collector, a RF detection means (RF-det) for detecting the RF current flowing through the current mirror transistor (T). Said RF detection means (RFdet) is connected to the collector of said first current mirror transistor (T). Said detection circuit further comprises a biasing means (bias-RF-det) for biasing said RF detection means (RF-det), wherein said biasing means is connected to said collector of said first current mirror (T) and said RF detection means (RF-det).

Output power detection circuit

An RF power amplifier according to the invention comprises a plurality of parallel output transistors (HBT,to HBT,,N) connected to a power supply. A plurality of base resistors (Rb,to Rb,,N) for the output transistors (HBT,to HBT,,N) and a plurality of input capacitors (Cb,to Cb,N), each coupled in parallel to receive an RF signal input and connected via at least one additional passive component to the inputs of each corresponding output transistor (HBT,to HBT,,N), are provided An output for an RF output signal is obtained from the parallel connection of the output transistors (HBT,to HBT,,N). The transistors (HBT,to HBT,,N) are heterojunction bipolar transistors.

RF power amplifier

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Nijmegen, Netherlands

Ronald Koster