Northrop Grumman Systems Corporation

Ronald Grundbacher

Po-Hsin Liu

Richard Lai

Michael Wojtowicz

Ioulia Smorchkova

Carol Osaka Namba

Sumiko L Poust

Yeong-Chang Choug

Denise L Leung

A method is provided for forming a gate contact for a compound semiconductor device. The gate contact is formed from a gate contact portion and a top or wing contact portion. The method allows for the tunablity of the size of the wing contact portion, while retaining the size of the gate contact portion based on a desired operational frequency. This is accomplished by providing for one or more additional conductive material processes on the wing contact portion to increase the cross-sectional area of the wing contact portion reducing the gate resistance, while maintaing the length of the gate contact portion to maintain the operating frequency of the device.

Method of forming a gate contact

An InP high electron mobility transistor (HEMT) structure in which a gate metal stack includes an additional thin layer of a refractory metal, such as molybdenum (Mo) or platinum (Pt) at a junction between the gate metal stack and a Schottky barrier layer in the HEMT structure. The refractory metal layer reduces or eliminates long-term degradation of the Schottky junction between the gate metal and the barrier layer, thereby dramatically improving long-term reliability of InP HEMTs, but without sacrifice in HEMT performance, whether used as a discrete device or in an integrated circuit.

High electron mobility transistor (HEMT) structure with refractory gate metal

Growing community of inventors

Oberrieden, Switzerland

Ronald Grundbacher