Thomson-csf

Ronald Funck

Raymond Henry

Jean Stevance

A hyperfrequency semiconductor device having external beam-lead connectors is provided with a capacitance connected in series with the inductance produced by said beam-leads, said capacitance being integrated in at least one of the latter and its value being so selected that at operating frequency of the device said capacitance compensates said inductance.

Hyperfrequency semiconductor device having external connections

A slot-line for a microwave device in which is mounted at least one diode connected in parallel between two metallic strips of the slot. At high frequencies (18 to 200 GHz), the inductance L of the diode connections presents a not-negligible impedance which makes it difficult to use the diode. The device in accordance with the invention comprises a slot-line reentrant circuit which provides compensation for the diode inductance and is constituted by a metallic section which is coplanar with the line and connected in series with the diode. The compensating section is short-circuited or open-circuited with respect to the metallic strip in which it is reentrant. The electrical length of the compensating section is adjustable by means of wire, conductive varnish or metal pads.

Growing community of inventors

Port Marly, France

Ronald Funck