Lucent Technologies Inc.

Agere Systems Inc.

Agere Systems Guardian Corp.

Triquint Technology Holding Co.

Ronald Eugene Leibenguth

Claude Lewis Reynolds, Jr

Abdallah Ougazzaden

Si Hyung Cho

Marlin Wilbert Focht

Charles H Joyner

Keith Wayne Goossen

George J Zydzik

Lucian Arthur D'Asaro

Leo M Chirovsky

Sanghee Park Hui

William Scott Hobson

William Crossley Dautremont-Smith

Betty Jyue Tseng

Sun-Yuan Huang

James Dennis Wynn

Claude L Reynolds

The invention is a semiconductor optical device and method of fabrication where the device includes an active region with an active layer having a first index of refraction, and a blocking region having a second, lower index of refraction. A semiconductor layer having an index of refraction higher than the blocking region is formed over both the active and blocking regions so that the semiconductor layer is in closer proximity to the active layer in areas not covered by the blocking region so as to decrease the difference between the effective index of refraction in the active region and the effective refractive index of the blocking region. Such devices are particularly useful for pumping optical amplifiers since greater power can be achieved while maintaining single mode emission.

Method of manufacturing semiconductor optical devices

A method for cooling an MOVPE deposited, As-containing, P-type contact layer includes cooling the contact layer in an arsine environment to preserve the contact layer during the initial stages of the cooling process until a threshold temperature in the range of 560 to 580&deg; C. is attained. During the cooling process, the arsine flow is reduced with respect to the arsine flow used during the MOVPE deposition. After the threshold temperature is attained, the arsine gas is withdrawn and the contact layer is cooled further. Because of the removal of the arsine gas at the threshold temperature, free carrier concentration within the contact layer is enhanced above the atomic concentration of the P-type dopant, and contact resistance is improved to a suitably low level. A semiconductor optoelectronic device is formed to include such a contact layer, the P-type dopant impurity present in an atomic concentration and the contact layer having a free carrier concentration being greater than the atomic concentration.

Enhancement of carrier concentration in As-containing layers

The present invention provides a method for monolithic integration of multiple devices on an optoelectronic substrate. The method, in a preferred embodiment, includes forming an active layer having a given wavelength over a substrate. The method further includes forming an N-type doped layer over a portion of the active layer to form first and second active regions within the active layer, the first active region having the given wavelength and the second active region having an altered wavelength different from the given wavelength. In one exemplary embodiment, the conditions used to form the N-type doped layer, for example, dopant concentration, growth rate and temperature, cause the difference in wavelength between the given wavelength and the altered wavelength.

Method for monolithic integration of multiple devices on an optoelectronic substrate

A method for cooling an MOVPE deposited, As-containing, P-type contact layer includes cooling the contact layer in an arsine environment to preserve the contact layer during the initial stages of the cooling process until a threshold temperature in the range of 560 to 580&deg; C. is attained. During the cooling process, the arsine flow is reduced with respect to the arsine flow used during the MOVPE deposition. After the threshold temperature is attained, the arsine gas is withdrawn and the contact layer is cooled further. Because of the removal of the arsine gas at the threshold temperature, free carrier concentration within the contact layer is enhanced above the atomic concentration of the P-type dopant, and contact resistance is improved to a suitably low level.

Enhancement of carrier concentration in As-containing contact layers

A VCSEL comprises separate current and optical guides that provide unique forms of drive current and transverse mode confinement, respectively. In one embodiment, the optical guide comprises an intracavity high refractive index mesa disposed transverse to the cavity resonator axis and a multi-layered dielectric (i.e., non-epitaxial) mirror overlaying the mesa. In another embodiment, the current guide comprises an annular first electrode which laterally surrounds the mesa but has an inside diameter which is greater than that of an ion-implantation-defined current aperture. The current guide causes current to flow laterally from the first electrode along a first path segment which is essentially perpendicular to the resonator axis, then vertically from the first segment along a second path segment essentially parallel to that axis, and finally through the current aperture and the active region to a second electrode. The dielectric mirror is deposited only after the formation of the guides in order to facilitate their fabrication.

Vertical cavity surface-emitting laser with optical guide and current aperture

A wavelength demultiplexer having at least two photodetectors is disclosed. The photodetectors are arranged in sequential layers along an optical path. The photodetectors differ in bandgap, and are arranged so that the optical signal passes through relatively larger bandgap photodetectors before being received by relatively smaller bandgap detectors. Each photodetector absorbs photons within a predetermined energy range and generates a voltage as a function of the absorbed energy. The photodetectors can be used to detect, and hence demultiplex, a wavelength-division-multiplexed signal.

Wavelength demultiplexing multiple quantum well photodetector

Growing community of inventors

Palmerton, PA, United States of America

Ronald Eugene Leibenguth