Danfoss Silicon Power Gmbh

Heraeus Deutschland Gmbh & Co Kg

Ronald Eisele

Frank Osterwald

Jacek Rudzki

Martin Becker

Holger Ulrich

Lars Paulsen

Klaus Kristen Olesen

Mathias Kock

Stefan Behrendt

Teoman Senyildiz

Frank Krüger

Wolfgang Schmitt

André Bastos Abibe

Anton-Zoran Miric

Steen Lauridsen

David Benning

Franke Wulf-Toke

Reiner Hinken

The invention relates to a power electronics module including a first circuit carrier (), as well as an electronic assembly () arranged in an electrically contacting manner on the upper flat side of the first circuit carrier (), and a first cooling element () in thermal contact with the underside of the first circuit carrier (), wherein the module has at least one second assembly () arranged on the upper side of a second circuit carrier () and a second cooling element () arranged on the underside of the second circuit carrier (), wherein the first and the second circuit carriers () are arranged with their upper sides facing one another and at least one central heat sink () that is electrically insulated from the assemblies () is arranged in the space between the assemblies (), wherein the assemblies () and the at least one central heat sink () are embedded in a heat-conducting potting compound (), wherein the module has a number N≥3 of circuit carriers () with assemblies () mounted on their upper sides and cooling elements () mounted on their undersides, and the sides having the assemblies () and directed towards one another are arranged around the central heat sink () forming a shape with an N-sided polygon as across-section.

Compact power electronics module with increased cooling surface

The invention relates to a power electronics module including a flat circuit carrier () and an electronic assembly () arranged in an electrically contacting manner on the upper flat side of the circuit carrier () and cooling bodies () thermally in contact with the underside of the circuit carrier (), wherein a heat-conducting bridge () arranged on the upper side of the circuit carrier (), spanning the assembly () and extensively covering same, wherein the heat-conducting bridge () is in thermal contact with the cooling body () at mounting points arranged next to the assembly () and the space between the heat-conducting bridge () and the circuit carrier () is filled with a heat-conducting potting compound ().

Power electronics module with improved cooling

Semiconductor module having a first substrate, a second substrate and a spacer distancing the substrates from each other, wherein the spacer is formed by at least one elastic shaped metal body.

Semiconductor module with a first substrate, a second substrate and a spacer separating the substrates from each other

Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

Process and device for low-temperature pressure sintering

Sintering tool () with a cradle for receiving an electronic subassembly (BG) to be sintered, characterized by at least one support bracket (), arranged at two locations opposite the cradle, for fixing a protective film () covering the electronic subassembly (BG).

Sintering tool and method for sintering an electronic subassembly

A power module () having a leadframe (), a power semiconductor () arranged on the leadframe (), a base plate () for dispersing heat generated by the power semiconductor () and a potting compound () surrounding the leadframe () and the power semiconductor (), that physically connects the power semiconductor () and/or the leadframe () to the base plate().

Power module

Tool () for the lower die of a sintering device, the tool () having a rest () for an electronic subassembly () comprising a circuit carrier, to be sintered, where the rest () is formed from a material with a coefficient of linear expansion that is close to the coefficient of expansion of the circuit carrier of the electronic subassembly ().

Sintering tool for the lower die of a sintering device

A semi-conductor module with an encapsulating mass that covers a semi-conductor component, in which the encapsulating mass is cement.

Semi-conductor module with an encapsulating cement mass that covers a semi-conductor component

A method for manufacturing semiconductor chips () having arranged thereon metallic shaped bodies (), having the following steps: arranging a plurality of metallic shaped bodies () on a processed semiconductor wafer while forming a layer arranged between the semiconductor wafer and the metallic shaped bodies (), exhibiting a first connection material () and a second connection material (), and processing the first connection material () for connecting the metallic shaped bodies () to the semiconductor wafer without processing the second connecting material (), wherein the semiconductor chips () are separated either prior to arranging the metallic shaped bodies () on the semiconductor wafer or after processing the first connection material ().

Method for manufacturing semiconductor chips

A semiconductor module () contains a ceramic interconnect device () having at least one semiconductor component (). The at least one semiconductor component () is covered by an encapsulating compound () which contains a cured inorganic cement and has a thermal expansion coefficient in the range of 2 to 10 ppm/K. The ceramic of the ceramic interconnect device () is selected from ceramics based on aluminum oxide, aluminum nitride or silicon nitride.

Semiconductor module comprising an encapsulating compound that covers at least one semiconductor component

Sintering device for sintering at least one electronic assembly, having a lower die and an upper die which is slidable towards the lower die, or a lower die which is slidable towards the upper die. The lower die forms a support for the assembly to be sintered and the upper die includes a receptacle for a pressure pad for exerting pressure directed towards the lower die, and a delimitation wall which laterally surrounds the pressure pad. The delimitation wall having an outer delimitation wall and an inner delimitation wall surrounded by the outer delimitation wall, the inner delimitation wall mounted so as to be slidable towards the outer delimitation wall and so as to be slid in the direction of the lower die such that, following the placing of the inner delimitation wall on the lower die, the pressure pad is displaceable in the direction of the lower die.

Sintering device

A method for cohesively connecting a first component of a power semiconductor module to a second component of a power semiconductor module by sintering, the method comprising the steps of: applying a layer of unsintered sinter material to a predetermined bonding surface of the first component, arranging the second component on the surface layer of unsintered sinter material, attaching the second component to the first component by applying pressure and/or temperature on a locally delimited partial area within the predetermined bonding surface, processing the first and/or second component and/or other components of the power semiconductor module, and complete-area sintering of the sinter material.

Method for cohesively connecting a first component of a power semiconductor module to a second component of a power semiconductor module

A power module () having a leadframe (), a power semiconductor () arranged on the leadframe (), a base plate () for dispersing heat generated by the power semiconductor () and a potting compound () surrounding the leadframe () and the power semiconductor (), that physically connects the power semiconductor () and/or the leadframe () to the base plate ().

Growing community of inventors

Surendorf, Germany

Ronald Eisele