Rca Inc.

General Electric Company

US Government As Represented by the Secretary of the Army

Ronald E Enstrom

Grzegorz Kaganowicz

John W Robinson

Paul P Webb

John R Appert

A semiconductor photodiode includes a substrate of semi-insulating indium phosphide having a first layer of highly doped P type indium phosphide on a surface thereof. An active second layer of N type indium gallium arsenide is on the first layer and a third layer of N type indium gallium arsenide or indium phosphide is on the second layer. The third layer may be entirely more highly doped than the second layer or may have a highly doped region on its surface. A first contact is on the third layer and a second contact is on the first layer. A buffer layer of lightly doped N or P type indium phosphide may be provided between the first layer and the second layer.

Rear entry photodiode with three contacts

A semiconductor body with an improved passivating layer is disclosed. In one embodiment, the body is a device comprising a semiconductor material having regions of opposite conductivity types which form a semiconductor junction therebetween which extends to a surface of the device. The passivating layer, comprising silicon oxynitride having a refractive index between about 1.55 and 1.75 and a substantial hydrogen content, overlies the surface at the junction. Also disclosed is a method for fabricating such a device wherein the vapor deposition of the passivating layer is carried out at low temperatures from an ambient having a ratio of silicon-containing to oxygen- and nitrogen-containing precursors of between about 1:1.67 and 1:5.

Silicon oxynitride passivated semiconductor body and method of making

A method of making a semiconductor device including forming regions of first and second conductivity types with a semiconductor junction therebetween which extends to a surface of the device, and depositing a passivating layer over the surface to overlie the junction, further comprises a pretreatment of the surface to enhance the electrical properties of the device and the effectiveness of the passivating layer. The pretreatment, carried out prior to deposition of the passivating layer, includes treating the surface with an aqueous ammonium fluoride-hydrogen fluoride solution and thereafter subjecting the surface to a plasma in an oxygen-free, nitrogen-containing ambient.

Preparation of a surface for deposition of a passinating layer

An apparatus for the treatment of a substrate with two or more gases includes a reaction chamber with an outlet and an inlet, and a gas introduction manifold comprising a closed hollow body with a cylindrical interior. Feed ports, extending through a wall of the body, are integral with valves disposed about said body. An aperture extends through an end surface of the body which aperture is connected to the inlet of the chamber. The valves are disposed such that they are at equal distances from the center axis of the inlet.

Vapor deposition apparatus and method of using same

A method is provided for making an improved photocathode wherein a step ged substrate links a semitransparent cathode made from one p-type III-V compound or complex to a different III-V compound in the form of a host crystal.

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Skillman, NJ, United States of America

Ronald E Enstrom