Philips Electronics North America Corporation

North American Philips Corporation

Koninklijke Phillips Electronics N.v.

Ronald D Pinker

Babar Ali Khan

David A Cammack

Nikhil R Taskar

Jerry Martin Kramer

Peter J Janssen

George A Melnik

Steven L Merchant

Emil Arnold

Gerard Cnossen

Vivek Mehrotra

Robert H Kane

Helmut Baumgart

George A Melnick

Arnold, Emil

Thomas F McGee, Iii

An LCD having the liquid crystal in at least a portion of the interpixel region displaced by a spacer material. The spacer material has a low dielectric constant relative to the liquid crystal, thus further impeding the formation of a bend deformation in the liquid crystal in the interpixel region when pixels on opposite sides of the spacer material are operating in the inversion mode. This elimination of the bend deformation in the interpixel region eliminates the reverse tilt disclination.

Elimination of the reverse-tilt in high-density reflective LCDs

A projection display device is provided which includes a border structure comprising a dam around the active display area of the device which both shields any underlying drive circuitry from the incidental light by reflecting this light-while passively controlling its birefringence such that this region appears dark to the viewer when no drive voltages are being applied. Preferably, the dam is positioned between the glue seal and the active region, the thickness of the dam being such as to allow a thin layer of LC material on top of the dam for compensated LC effects and in such case, the border structure between the glue seal and the active region is also effective to keep the glue from seeping into the active region when the seal line is squeezed during assembly. With a high birefringence material and an external compensation foil, a high degree of light extinction is achieved over the border. Also, formation of the border on the active plate means that no critical alignment of the passive plate is needed.

Reflective LCD with dark borders

A high pressure gas discharge lamp and the method of making same utilizing integrated circuit fabrication techniques. The lamp is manufactured from heat and pressure resistant planar substrates in which cavities are etched, by integrated circuit manufacturing techniques, so as to provide a cavity forming the gas discharge tube. Electrodes are deposited in the cavity. The cavity is filled with gas discharge materials such as mercury vapor, sodium vapor or metal halide. The substrates are bonded together and channels may be etched in the substrate so as to provide a means for connection to the electrodes. Lamps having ignition enhancing and hot restrike features, as well as single-sided electrodes, are disclosed.

Gas discharge lamps fabricated by micromachined transparent substrates

A high pressure gas discharge lamp and the method of making same utilizing integrated circuit fabrication techniques. The lamp is manufactured from heat and pressure resistant planar substrates in which cavities are etched, by integrated circuit manufacturing techniques, so as to provide a cavity forming the gas discharge tube. Electrodes are deposited in the cavity. The cavity is filled with gas discharge materials such as mercury vapor, sodium vapor or metal halide. The substrates are bonded together and channels may be etched in the substrate so as to provide a means for connection to the electrodes. Electrodeless RF activated lamps may also be fabricated by this technique. Lamps fabricated from three or more planar substrates are disclosed.

Gas discharge lamps and lasers fabricated by micromachining methodology

A vacuum state microelectronic device comprising at least a cathode, an anode, and a grid, disposed in a cavity, and formed by the wafer bonding of two planar substrates. The technology permits multiple vacuum state microelectronic devices (vacuum tubes) to be arrayed on a single substrate in an integrated manner.

Vacuum microelectronic device and methodology for fabricating same

A discharge lamp includes a first and a second substrate (12, 14), a cavity disposed in the first substrate (12) or in a portion of the first and a second substrate (12, 14), a first and a second aligned electrode (270, 272) disposed between the first and a second substrate (12, 14) having respective ends extending into the cavity, wherein the first and the second aligned electrode (270, 272) are 'T-shaped' when viewed in cross-section. The T-shaped electrodes provide mechanical support that minimizes bending and distortion in the horizontal and vertical directions. The discharge lamp may include a charge of mercury or an inert gas, and may further include a phosphor layer (80).

Discharge lamp with T-shaped electrodes

A liquid crystal display is provided using a flat panel of microlamps being formed from gas discharge display structures and made by the method of making the same utilizing integrated circuit fabrication techniques. The flat panel of microlamps is formed into an array for providing light to individual pixels, or a small number of pixels, in a liquid crystal display. Such microlamp lighting can increase the illumination of LCDs.

Flat panel light source for liquid crystal displays

A high pressure gas discharge lamp and the method of making same utilizing integrated circuit fabrication techniques. The lamp is manufactured from heat and pressure resistant planar substrates in which cavities are etched, by integrated circuit manufacturing techniques, so as to provide a cavity forming the gas discharge tube. Electrodes are deposited in the cavity. The cavity is filled with gas discharge materials such as mercury vapor, sodium vapor or metal halide. The substrates are bonded together and channels may be etched in the substrate so as to provide a means for connection to the electrodes. Electrodeless RF activated lamps may also be fabricated by this technique. Micro-lasers may also be fabricated by this technique as well.

Gas discharge lamps and lasers fabricated by michromachining

A vacuum state microelectronic device comprising at least a cathode, an anode, and a grid, disposed in a cavity, and formed by the wafer bonding of two planar substrates. The technology permits multiple vacuum state microelectronic devices (vacuum tubes) to be arrayed on a single substrate in an integrated manner. So as to form a bond as strong as the substrate itself.

A microlamp structure and method of making the same is set forth having light collection and light directing features. The microlamp structure is of a luminescent gas discharge type. The light collection structures may include types of reflectors while the light directing structures may include lens features. These features may be included singly or in combination and may be provided on the exterior of the microlamp structure or on the interior of the microlamp at a light forming cavity.

Microlamp incorporating light collection and display functions

A gas discharge display and the method of making same utilizing integrated circuit fabrication techniques. The display is manufactured from heat and pressure resistant planar substrates in which cavities are etched, by integrated circuit manufacturing techniques, so as to provide individual pixels. Orthogonal electrodes are deposited on the substrates and extend into the cavities. The cavities are filled with gas discharge materials, such as plasma, upon energization of the electrodes the individual cavities forming the pixels may be individually activated.

Gas discharge displays and methodology for fabricating same by

A silicon-on-insulator material is formed by a method which includes the steps of forming a p-type silicon epitaxial layer, doped with boron and a higher concentration of germanium, on the surface of a semiconductor silicon substrate, forming an additional silicon epitaxial layer on the p-type silicon epitaxial layer, forming an oxide layer on the additional silicon epitaxial layer, forming an oxide layer on another semiconductor silicon substrate, forming a laminate by bringing into contact, at room temperature, the oxide layers thereby bonding together the substrates, etching the silicon substrate provided with the silicon epitaxial layers, with an isotropic etch to remove most of this silicon substrate, exposing the laminate to an anisotropic etch for this silicon substrate until the remainder of this silicon substrate is removed but only a part of the p-type epitaxial layer is removed and then exposing the resultant structure to an additional isotropic etch for the p-type epitaxial layer for a time sufficient only to remove only the remainder of the p-type epitaxial layer.

Process for making strain-compensated bonded silicon-on-insulator

A very thin silicon film SOI device can be made utilizing a bond and etch-back process. In the presently claimed invention, boron dopant is introduced into a surface of a silicon device wafer and the doped surface is bonded onto another silicon wafer at an oxide surface. The device wafer is thinned by etching down to the doped region and, by subsequent annealing in hydrogen, boron is diffused out of the silicon surface layer to produce very thin SOI films.

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Peekskill, NY, United States of America

Ronald D Pinker