Other

Honeywell G.m.b.h.

Texas Instruments Corporation

Ronald B Foster

Robert G Johnson

Keith Alan Joyner

Walter T Matzen

James O Holmen

Uppili Sridhar

A vehicle alarm notification system including a housing having a plurality of directional indicia on a front side thereof. A wireless transceiver is operably connected to a power source disposed within the housing, wherein the transceiver can receive an alert signal from a vehicle alarm system when the vehicle alarm system is activated. A microprocessor is operably connected to the wireless transceiver. The microprocessor can determine a location of a vehicle, via an associated vehicle GPS, relative to a position of the housing. The microprocessor is further programmed to illuminate one of the plurality of directional indicia to indicate the location of the vehicle relative to the position of the housing when the alert signal is received. In some embodiments, a speaker is disposed within the housing, wherein the speaker can emit an audible alarm when the alert signal from a corresponding vehicle alarm system is received.

Vehicle alarm notification system

Disclosed is a polymer electrolyte membrane (PEM) fuel cell assembly apparatus for receiving an inserted membrane electrode assembly (MEA). The apparatus includes modular features for connecting a plurality of fuel cells into a planar fuel cell &ldquo;stack&rdquo; capable of using ambient air to supply oxidant gas and dissipate heat and water vapor. The invention also facilitates convenient removal and replacement of individual cells or MEAs in a stack without disassembly of the entire stack.

Modular polymer electrolyte membrane unit fuel cell assembly and fuel cell stack

A semiconductor device is provided for use as a bidirectional surge suppressor circuit. It incorporates doped regions of substrate and epitaxial layers which result in a dual Zener diode arrangement having the Zener diodes associated in an opposite polarity arrangement. The semiconductor device comprises a substrate with an epitaxial layer deposited on one of its surfaces. In an upper surface of the epitaxial layer, first and second regions of P type material are diffused with guard rings comprising P+ type material diffused around the first and second regions. The guard rings are heavily doped and extend much deeper than the relatively shallow junctions of P material. A channel stopper of N+ conductivity type material is diffused into the upper surface of the epitaxial layer to provide a channel stopper, or sinker, around both the first and second regions and their associated guard rings and, additionally, between the first and second regions. This structure provides several significant advantages including reduced current leakage reliability, uniform breakdown voltage, crack resistance and a smaller area needed to provide the required thermal capacity.

Bidirectional surge suppressor Zener diode circuit with guard rings

The marginal adhesion of platinum to silicon nitride is a serious issue in the fabrication of microbridge mass air flow sensors. High temperature stabilization anneals (500.degree.-1000.degree. C.) are necessary to develop the properties and stability necessary for effective device operation. However, the annealing process results in a significant reduction in the already poor platinum/silicon nitride adhesion. Annealing at relatively high temperatures leads to the development of numerous structural defects and the production of non-uniform and variable sensor resistance values. The use of a thin metal oxide adhesion Layvr, approximately 20 To 100 angstromw in thickness is very effective in maintaining platinum adhesion to silicon nitride, and through the high temperature anneal sequence.

Adhesion layer for platinum based sensors

Disclosed is a process for depositing a metal film on a silicon oxide or silicon nitride surface. This process provides an extremely adherent metallic film and is resistant to interdiffusion between the semiconductor, the insulator, and the metal. The process includes forming contact openings through an insulating layer to a silicon substrate; sputter etching the insulating layer and exposed substrate; depositing layers of platinum, a barrier metal and a conducting metal; and heating to form platinum silicide in the contact openings. The process is useful in forming an electrical interconnection system on a semiconductor device.

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Garland, TX, United States of America

Ronald B Foster