Varian Associates, Inc.

Ronald A Powell

Susan Benjamin Felch

Ronald T Fulks

Dimitry M Kirillov

A broadband optical detector is disposed to measure the total intensity I(.lambda., .alpha.) attributed to a portion of the optical spectrum passed by a sharp bandgap optical transmission element as the bandgap is caused to translate over a desired wavelength interval by a band gap control parameter, T. The differential spectrum of the incident optical radiation is recovered by the differentiation of I(.lambda., .alpha.) in respect to the parameter T.

Optical spectrometer

Remote measurement of temperature of a process chamber provided with a substrate exhibiting a temperature dependent band gap which substrate is illuminated by a source of continuous spectrum light with a spectrum which overlaps the band gap edge of the substrate. The light which exits the substrate is focused by a lens and is picked up by a fiber optic which takes it to a spectrometer where the spectrum is analyzed to ascertain the intensity versus wavelength histograph for exit rays in the wavelength region of the equivalent band gap of the substrate. The wavelength at the point of infection in the region of band gap edge of the substrate in the histograph of the wavelength versus intensity characteristic of exit rays determines the real time substrate temperature from predetermined calibration data which correlates the wavelength at the point of inflection to actual temperature of the substrates.

Method and apparatus for temperature measurements

A method of mapping implanted ion dose uniformity is disclosed in which wafers of polysilicon-on-silicon or polysilicon-on-oxidized-silicon are implanted with the ion dose to be mapped and then scanned in a spectrophotmeter using monochromatic radiation. An interference spectral technique is used to achieve improved sensitivity while preserving thermal and electrical properties close to those of actual devices.

Method of mapping ion implant dose uniformity

A probe having four spring-loaded tips contacts the backside of a semiconductor wafer in a processing machine. A current is induced across the outer tips and a voltage proportional to the sheet resistance of the wafer is measured across the inner tips. Wafer thickness is used to convert sheet resistance to bulk resistivity. Data on resistivity as a function of temperature is used to determine wafer temperature.

Semiconductor wafer temperature measuring device and method

Doping of a semiconductor wafer is accomplished by placing the wafer in close proximity to a solid planar dopant source and rapidly heating the combination to a high temperature for a short time in a rapid thermal processing apparatus.

Method for doping semiconductor wafers by rapid thermal processing of

Multichromatic radiation is applied rapidly to silicon or polysilicon placed in contact with a silicide-forming metal to form metal silicide having low resistivity without deleterious later diffusion of dopants in adjacent single crystal or polysilicon. The radiation is applied to a metal deposited on silicon or to a metal codeposited with or to silicide deposited from a metal-Si composite target. The temperatures preferably rise to between 600.degree. C. and 1200.degree. C. and the total heating periods are less than about one minute, with 10 to 30 seconds being typical.

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Redwood City, CA, United States of America

Ronald A Powell