International Business Machines Corporation

Ronald A Kaschak

Roy H Magnuson

Dae Young Jung

Luis Jesus Matienzo

Robert Wagner

John Steven Kresge

Donald P Seraphim

Donald G McBride

Edmond Otto Fey

Francis Joseph Downes, Jr

Robert G Rickert

Daniel C Van Hart

Steven A Schubert

Gerald G Advocate, Jr

Peter Haselbauer

Hans-Dieter Kilthau

Melanie A Day

John M Lauffer

Edward John Yarmchuk

Bernd Karl Appelt

Irving Memis

Stephen L Tisdale

Robin A Susko

Andrew Michael Seman

Michael J Canestaro

James Jens Hansen

Joseph Hromek

Robert J Capwell

David K Balkin

Lois J Root

Peter A Burnett

Magan S Patel

Lawrence C Alexander

Paul Chebiniak

An electronic structure including a metallic interlocking structure for bonding a conductive plated layer to metal surface, and a method of forming the electronic structure. The method provides a substrate having a metallic sheet within a dielectric layer. The metallic sheet includes a metal such as copper. An opening in the substrate, such as a blind via, is formed by laser drilling through the dielectric layer and partially through the metallic sheet. If the opening is a blind via, then the laser drilling is within an outer ring of the blind via cross section using a laser beam having a target diameter between about 20% and about 150% of a radius of the blind via cross section. A surface at the bottom of the opening, called a &ldquo;blind surface,&rdquo; includes a metallic protrusion formed by the laser drilling, such that the metallic protrusion is integral with a portion of the blind surface. The metallic protrusion includes the metal of the metallic sheet and at least one constituent element from the dielectric layer. The metallic protrusion is then etched to form a metallic interlocking structure that is integral with the portion of the blind surface. The metallic interlocking structure includes discrete metallic fibers, with each metallic fiber having a curved (or curled) geometry. Each metallic fiber has its own unique composition that includes the metal, at least one constituent element of the dielectric layer, or both.

Formation of a metallic interlocking structure

Metallic interlocking structure

Method and product resulting therefrom of controlling the residual resistivity of an electrolessly deposited metal by first, calculating the mathematical relationship between the residual resistivity of the deposited metal and its rate of deposition and second, depositing said metal at a rate to produce a predetermined residual resistivity.

Product formed by method of controlling resistivity of plated metal

Circuit boards or cards containing metallic layers on opposite major surfaces of a dielectric substrate whereby electrical and/or thermal interconnection between the metallic layers is provided in vias that extend through one of the metallic layers, and the dielectric substrate and into the other metallic layer.

Electrical and/or thermal interconnections and methods for obtaining such

Nodule formation in a continuous electroless copper plating system is minimized by independently controlling the dissolved oxygen contents on the plating solution in the bath and in the associated external piping. The level of dissolved oxygen in the plating tank is maintained at a value such that satisfactory plating takes place. At the point where the plating solution leaves the tank, additional oxygen gas is introducted into the solution so that the level of dissolved oxygen in the plating solution in the external piping is high enough to prevent any plating from taking place in the external piping and so that in the external piping the copper is etched or dissolved back into solution. At the end of the external piping, the dissolved oxygen level is reduced so that the dissolved oxygen level of the plating solution in the tank is maintained at the level where plating will take place.

Electroless plating with bi-level control of dissolved oxygen, with

Copper is deposited onto a substrate by plating a first layer of copper onto the substrate from an electroless plating bath and plating a second layer of copper onto the first layer of copper from a second and different electroless plating bath. The first and second plating baths differ from each other in at least the cyanide content. The process reduces plating void defects and reduces nodule formation.

Copper deposition from electroless plating bath

Method of controlling resistivity of plated metal and product formed

Copper is plated onto a substrate from an electroless plating bath having a mix potential relative to a saturated calomel electrode of about minus 630 to about minus 675 millivolts at a temperature of about 73.degree. C. The mix potential of the bath is monitored and adjusted during the plating to maintain it at about minus 630 to about minus 675 millivolts with respect to a calomel electrode at a temperature of about 73.degree. C. The number of of plating void defects is thereby reduced.

Copper plating

Nodule formation in a continuous electroless copper plating system is minimized by independently controlling the dissolved oxygen contents on the plating solution in the bath and in the associated external piping. The level of dissolved oxygen in the plating tank is maintained at a value such that satisfactory plating takes place. At the point where the plating solution leaves the tank, additional oxygen gas is introduced into the solution so that the level of dissolved oxygen in the plating solution in the external piping is high enough to prevent any plating from taking place in the external piping and so that in the external piping the copper is etched or dissolved back into solution. At the end of the external piping, the dissolved oxygen level is reduced so that the dissolved oxygen level of the plating solution in the tank is maintained at the level where plating will take place.

Electroless plating with bi-level control of dissolved oxygen

Method for controlling plating in an electroless plating process. The plating rate is continuously monitored. The plating rate is compared with a set point plating rate. A control voltage is derived proportional to the difference in plating rate and the desired plating rate, the integral of the difference, and the derivative of the difference. The control voltage is applied to a replenishment control for controlling the replenishment rate of a constituent chemical of the plating process.

Method for controlling plating rate in an electroless plating system

A method for plating a metal from an electroless plating bath onto a substrate is provided which includes providing a source of an electroless plating bath at a non-plating temperature in a master mixing tank; transferring at least a portion of the plating bath to at least one plating cell, changing the bath temperature to a plating temperature, and contacting the substrate to be plated with the bath at a plating temperature.

Method for plating from an electroless plating bath

A metal is deposited onto a substrate from an electroless plating solution by plating an initial layer of metal onto the substrate, then contacting the metal-plated substrate with a solution of an acid; and plating an additional layer of metal onto the plated, acid-treated substrate. The process reduces the plating void defects.

Deposition of a metal from an electroless plating composition

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Vestal, NY, United States of America

Ronald A Kaschak