Dsp Group Limited

Intel Corporation

Ron Pongratz

Sergey Anderson

Run Levinger

Alexander Mostov

Eyal Goldberger

Shilpa Talwar

Kameran Azadet

Hosein Nikopour

Bryan K Casper

Ofir Degani

Wook Bong Lee

Ashoke Ravi

Michael Genossar

Claudio Da Silva

Stefano Pellerano

Debabani Choudhury

Rotem Banin

Sidharth Dalmia

Albert Molina

Georgios Yorgos Palaskas

Duncan Kitchin

Igal Kushnir

Oner Orhan

Saku Lahti

Emanuel Cohen

Gadi Shor

Mikko S Komulainen

Jayprakash Thakur

Eren Sasoglu

Arnaud Lucres Amadjikpe

Kunal Datta

Menashe Soffer

Ana M Yepes

Moshe Teplitsky

Omer Asaf

Chintan S Thakkar

Eshel Gordon

Josef Hagn

Erkan Alpman

Nebil Tanzi

Baljit Singh

Tawfiq Musah

Peter Sagazio

Amit Freiman

Shuhei Yamada

Eran Gerson

Yossi Tsfati

Shmuel Ravid

Kaushik Dasgupta

Resti Montoya Moreno

Noam Kogan

Nir Weisman

Marian K Verhelst

Anandaroop Chakrabarti

Meir Gordon

Mikko M Lampinen

Miroslav Baryakh

Naftali Landsberg

Eli Schwartz

Ra'anan Sover

Avi Tsarfati

Lior Shakedd

Anat Bazov

Stefano Brenna

Saeid Daneshgar Asl

Amr M Fahim

Shinwon Kang

Te Yu Kao

Nathan G Narevsky

Gregory Chance

Brandon Davis

Gregory W Chance

Brandon R Davis

Avi Cohen

Svetozar Broussev

Yaron Hasson

Igor Gertman

Ilya Sima

Sharon Betzalel

Anat Rubin

Millimeter wave (mmWave) technology, apparatuses, and methods that relate to transceivers, receivers, and antenna structures for wireless communications are described. The various aspects include co-located millimeter wave (mmWave) and near-field communication (NFC) antennas, scalable phased array radio transceiver architecture (SPARTA), phased array distributed communication system with MIMO support and phase noise synchronization over a single coax cable, communicating RF signals over cable (RFoC) in a distributed phased array communication system, clock noise leakage reduction, IF-to-RF companion chip for backwards and forwards compatibility and modularity, on-package matching networks, 5G scalable receiver (Rx) architecture, among others.

Wireless communication technology, apparatuses, and methods

An inductive switch comprises an inductor that has a primary metallic winding having a boundary configured in shape of a figure eight, such as in two loops, and a plurality of secondary metallic windings arranged within the boundary of the primary metallic winding. The inductive switch includes a plurality of switches, each switch arranged in series with a respective one of the plurality of secondary metallic windings. An equal number of the secondary windings is arranged within each loop. A tunable inductor comprises at least one main metallic loop and at least one secondary metallic loop, wherein the at least one secondary metallic loop comprises a switch that is arranged to configure the at least one secondary metallic loop into at least one shorted metallic loop or at least one closed metallic loop. The at least one shorted loop is floating.

Oscillator frequency range extension using switched inductor

An integrated circuit that includes a die with an active radio frequency (RF) unit embedded thereon; a first port for receiving an output signal from the active RF unit; a harmonic filter that comprises a first harmonic filter inductor; and a first RF inductive load that is electrically coupled to the first port and is magnetically coupled to the first harmonic filter inductor.

Radio frequency circuitr having an integrated harmonic filter and a radio frequency circuit having transistors of different threshold voltages

A biasing device for direct current (DC) biasing a linear power amplifier that comprises multiple linear power amplifier circuits that are ideally identical to each other; wherein the biasing device may include a replica circuit that is a replica of a linear power amplifier circuit of the multiple linear power amplifier circuits; and a bias control circuit; wherein the bias control circuit is configured to feed the replica circuit with one or more DC biasing signals thereby maintaining at a constant value a replica DC current that is consumed by the replica circuit, and maintaining at a fixed value a replica DC voltage of a replica output node of the replica circuit; and wherein the replica circuit is coupled the multiple linear power amplifier circuits and is configured to supply DC voltage bias signals that force each linear power amplifier circuit of the multiple linear power amplifier circuits to consume a linear power amplifier circuit DC current that equals the replica DC current, when the linear power amplifier circuit is fed with a linear power amplifier DC voltage that either equals the replica DC voltage or differs from the replica DC voltage by a fraction of the replica DC voltage.

PVT robust closed loop CMOS bias for linear power amplifier

A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 wireless local area network (WLAN), third generation (3G) and fourth generation (4G) cellular standards, BLUETOOTH&#x2122;, ZIGBEE&#x2122;, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard Complementary metal-oxide-semiconductor (CMOS) processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.

Linear row array integrated power combiner for RF power amplifiers

A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.

CMOS based TX/RX switch

A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, BLUETOOTH&#xae;, ZIGBEE&#xae;, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.

Growing community of inventors

Tel Aviv, Israel

Ron Pongratz