Dynalinear Technologies, Inc.

Ron Green

Alzon B Canilao

Hyungmo Yoo

Reza Esfandiari

Nam-Min Cho

A power amplifier includes larger size transistors to provide higher power gain at lower frequencies. Transistors of transistor unit cells include a horseshoe-shaped emitter and a strip-shaped base to increase gain. Transistors are combined at a first level to form transistor arrays, which are combined with bonding wires at a second level to an output micro strip transmission line. A Vbe referenced bias circuit may include a smart function to lower quiescent current.

High linearity smart HBT power amplifiers for CDMA/WCDMA application

An RF amplifier comprises a power amplifier and a dual bias circuit. A dual bias circuit comprises a constant current source and a constant voltage source for biasing the power amplifier. The power may include a heterojunction bipolar transistor (HBT) or a bipolar junction transistor (BJT).

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Santa Clara, CA, United States of America

Ron Green