Applied Microstructures, Inc.

Applied Materials, Inc.

Spts Technologies Limited

Other

Lam Research Corporation

Romuald Nowak

Boris Kobrin

Jeffrey D Chinn

Richard C Yi

Kevin P Fairbairn

Fred Conrad Redeker

Adrien Lavoie

Hu Kang

Jun Qian

Michael D Lowery

Turgut Sahin

Laurent G Hoffmann

Michael Grimes

Tetsuya Ishikawa

Dan Maydan

Shijian Li

Ashok K Sinha

Jay D Pinson, Ii

Derek R Witty

Kent Rossman

Timothy S Dyer

Troy S Detrick

Jeffrey D Chin

Hichem M'Saad

Benigno A Janeiro

Nikunj Dangaria

Dangaria Nikunji Hirji

An apparatus for vapor deposition of thin film coatings, including: a process controller; a plurality of precursor containers into which a plurality of coating precursors, each in the form of a liquid or a solid, are respectively placed; a plurality of precursor vapor reservoirs, each in communication with a respective one of said precursor containers; a plurality of in-line devices which control a vapor flow of a coating precursor vapor from one of said precursor containers into one of said precursor vapor reservoirs with which said precursor container is in communication upon receipt of a signal from said process controller; a plurality of precursor control valves which control vapor flow from said precursor vapor reservoir upon receipt of a signal from said process controller; and a process chamber for vapor deposition of said coating on a substrate when present in said process chamber.

Apparatus and method for controlled application of reactive vapors to produce thin films and coatings

Disclosed are methods of depositing films of material on multiple semiconductor substrates in a multi-station processing chamber. The methods may include loading a first set of one or more substrates into the processing chamber at a first set of one or more process stations and depositing film material onto the first set of substrates by performing N cycles of film deposition. Thereafter, the methods may further include transferring the first set of substrates from the first set of process stations to a second set of one or more process stations, loading a second set of one or more substrates at the first set of process stations, and depositing film material onto the first and second sets of substrates by performing N' cycles of film deposition, wherein N&#x2032; is not equal to N. Also disclosed are apparatuses and computer-readable media which may be used to perform similar operations.

Single ALD cycle thickness control in multi-station substrate deposition systems

An article having a surface treated to provide a protective coating structure in accordance with the following method: vapor depositing a first layer on a substrate, wherein the first layer is a metal oxide adhesion layer selected from the group consisting of an oxide of a Group IIIA metal element, a Group IVB metal element, a Group VB metal element, and combinations thereof; vapor depositing a second layer upon the first layer, wherein the second layer includes a silicon-containing layer selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; and vapor depositing a third layer upon the second layer, wherein the third layer is a functional organic-comprising layer, wherein the functional organic-comprising layer is a SAM.

Durable, heat-resistant multi-layer coatings and coated articles

A vapor phase deposition method and apparatus for the application of thin layers and coatings on substrates. The method and apparatus are useful in the fabrication of electronic devices, micro-electromechanical systems (MEMS), Bio-MEMS devices, micro and nano imprinting lithography, and microfluidic devices. The apparatus used to carry out the method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. The apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the coating formation process. The precise addition of each of the reactants in vapor form is metered into a predetermined set volume at a specified temperature to a specified pressure, to provide a highly accurate amount of reactant.

A method of protecting a substrate during fabrication of semiconductor, MEMS devices. The method includes application of a protective thin film which typically has a thickness ranging from 3 angstroms to about 1,000 angstroms, wherein precursor materials used to deposit the protective thin film are organic-based precursors which include at least one fluorine-comprising functional group at one end of a carbon back bone and at least one functional bonding group at the opposite end of a carbon backbone, and wherein the carbon backbone ranges in length from 4 carbons through about 12 carbons. In many applications at least a portion of the protective thin film is removed during fabrication of the devices.

Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures

The present invention is related to carbon-doped metal oxide films. The carbon-doped metal oxide films provide a low coefficient of friction, for example ranging from about 0.05 to about 0.4. In addition, the carbon-doped metal oxide films applied over a silicon substrate, for example, provide anti-stiction properties, where the measured work of adhesion for a MEMS device cantilever beam coated with the carbon-doped metal oxide film is less than 10 &#x3bc;J/m. In addition, the carbon-doped metal oxide films provide unexpectedly good water vapor transmission properties. The carbon content in the carbon-doped metal oxide films ranges from about 5 atomic % to about 20 atomic %.

Durable conformal wear-resistant carbon-doped metal oxide-comprising coating

An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the chemical composition of the substrate, whereby a subsequently deposited layer bonds better to the oxide-based layer. The improved method is used to deposit multilayered coatings where an oxide-based layer is deposited directly over a substrate and an organic-based layer is directly deposited over the oxide-based layer. Typically, a series of alternating layers of oxide-based layer and organic-based layer are applied.

Controlled vapor deposition of multilayered coatings adhered by an oxide layer

A method of providing a durable protective coating structure which comprises at least three layers, and which is stable at temperatures in excess of 400&#xb0; C., where the method includes vapor depositing a first layer deposited on a substrate, wherein the first layer is a metal oxide adhesion layer selected from the group consisting of an oxide of a Group IIIA metal element, a Group IVB metal element, a Group VB metal element, and combinations thereof; vapor depositing a second layer upon said first layer, wherein said second layer includes a silicon-containing layer selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; and vapor depositing a third layer upon said second layer, wherein said third layer is a functional organic-comprising layer. Numerous articles useful in electronics, MEMS, nanoimprinting lithography, and biotechnology applications can be fabricated using the method.

An intraocular lens with a hydrophilic polymer coating composition and method of preparing same are provided. Specifically, a composition suitable for reducing tackiness in intraocular lenses is provided wherein an acrylic intraocular lens is treated by vapor deposition with an alkoxy silyl terminated polyethylene glycol polymer composition.

Controlled vapor deposition of biocompatible coatings for medical devices

An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the chemical composition of the substrate, whereby a subsequently deposited layer bonds better to the oxide-based layer. The improved method is used to deposit multilayered coatings where an oxide-based layer is deposited directly over a substrate and a SAM organic-based layer is directly deposited over the oxide-based layer. Typically a series of alternating layers of oxide-based layer and organic-based layer are applied.

Method of depositing a multilayer coating with a variety of oxide adhesion layers and organic layers

The present invention is related to a chemical vapor deposition method of depositing layers of materials to provide super-hydrophilic surface properties, or super-hydrophobic surface properties, or combinations of such properties at various locations on a given surface. The invention also relates to electronic applications which make use of super-hydrophobic surface properties, and to biological applications which make use of super-hydrophilic surface properties.

Articles with super-hydrophobic and-or super-hydrophilic surfaces and method of formation

We have developed an improved vapor-phase deposition method and apparatus for the application of films/coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled.

Controlled deposition of silicon-containing coatings adhered by an oxide layer

A method of protecting a substrate during fabrication of semiconductor, MEMS, or biotechnology devices. The method includes application of a protective thin film which typically has a thickness ranging from about 3 &#x212b; to about 1,000 &#x212b;, wherein precursor materials used to deposit the protective thin film are organic-based precursors which include at least one fluorine-comprising functional group at one end of a carbon back bone and at least one functional bonding group at the opposite end of a carbon backbone, and wherein the carbon backbone ranges in length from 4 carbons through about 12 carbons. In many applications at least a portion of the protective thin film is removed during fabrication of the devices.

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Cupertino, CA, United States of America

Romuald Nowak