E Ink California, LLC

Cmc Materials, Inc.

Cabot Microelectronics Corporation

Cmc Marerials LLC

Roman A Ivanov

Hui Du

Ming Wang

Robert Arthur Sprague

Haiyan Gu

Yu Li

Xiaojia Zhang

Fernando Hung Low

Steven Grumbine

Kevin P Dockery

Steven Kraft

Cheng-Yuan Ko

Craig Lin

HongMei Zang

Alexander W Hains

Fred Sun

Na Zhang

Deepak Shukla

Xiaojia Wang

Yajuan Chen

Brian Reiss

Glenn Whitener

Benjamin Petro

Bo-Ru Yang

Kim Long

Brittany Johnson

Yao-Jen Hsieh

Daniel Clingerman

Galyna Krylova

Brian Sneed

Zhao Liu

Fernando Hung

Hong-Mei Zang

T J Lin

David Bailey

TJ Lin

The invention provides a method of chemically mechanically polishing a substrate, especially a substrate comprising boron-doped polysilicon, comprising contacting the substrate with a chemical-mechanical polishing composition comprising an abrasive selected from α-alumina, silica, and a combination thereof, ferric ion, an organic acid, or a combination thereof, and water. The invention also provides a chemical-mechanical polishing composition comprising α-alumina, a nitrogen-containing compound selected from a zwitterionic homopolymer at, a monomeric ammonium salt, and a combination thereof, an organic acid, and water. The invention further provides a chemical-mechanical polishing composition comprising silica, an organic acid, ferric ion, and water.

Composition and method for polishing boron doped polysilicon

The invention provides a chemical-mechanical polishing composition for polishing a silicon nitride containing substrate. The composition includes an aqueous carrier; cationic silica particles dispersed in the aqueous carrier, the cationic silica abrasive particles having a zeta potential of at least 10 mV in the polishing composition; a polishing additive selected from the group consisting of a polyether amine, a polysilamine, a polyvinylimidazole, and a combination thereof, wherein the polyether amine and the polysilamine have corresponding weight average molecular weights of about 1,000 g/mol or less. The composition has a pH of greater than about 6. A method for polishing a silicon nitride containing substrate is also provided.

Composition and method for silicon nitride CMP

A chemical mechanical polishing composition includes a liquid carrier and colloidal silica particles dispersed in the liquid carrier. The colloidal silica particles have a positive charge of at least 10 mV in the liquid carrier and may be characterized as having: (i) a number average aspect ratio of greater than about 1.25 and (ii) a normalized particle size span by weight of greater than about 0.42. The polishing composition may further optionally include an iron-containing accelerator and a tungsten etch inhibitor, for example, when the polishing composition is a tungsten CMP composition.

CMP composition including a novel abrasive

A composition comprises, consists of, or consists essentially of a polymer including a derivatized amino acid monomer unit. A chemical mechanical polishing composition includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, and a cationic polymer having a derivatized amino acid monomer unit. A method of chemical mechanical polishing includes utilizing the chemical mechanical polishing composition to remove at least a portion of a metal or dielectric layer from a substrate and thereby polish the substrate.

Derivatized polyamino acids

A chemical mechanical polishing composition for polishing a substrate having copper, barrier, and dielectric layers includes a water based liquid carrier, cationic silica abrasive particles dispersed in the liquid carrier, and a triazole compound, wherein the polishing composition has a pH of greater than about 6 and the cationic silica abrasive particles have a zeta potential of at least 10 mV. The triazole compound is not benzotriazole or a benzotriazole compound. A method for chemical mechanical polishing a substrate including copper, barrier, and dielectric layers includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the copper, barrier, and dielectric layers from the substrate and thereby polish the substrate.

Composition and method for copper barrier CMP

A chemical mechanical polishing composition for polishing a substrate includes a liquid carrier and cationic metal oxide abrasive particles dispersed in the liquid carrier. The cationic metal oxide abrasive particles have a surface modified with at least one compound consisting of a silyl group having at least one quaternary ammonium group. A method for chemical mechanical polishing a substrate including a metal layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the metal layer from the substrate and thereby polish the substrate.

Composition and method for metal CMP

A chemical mechanical polishing composition includes a water based liquid carrier, cationic abrasive particles dispersed in the liquid carrier, a first amino acid compound having an isoelectric point of less than 7 and a second amino acid compound having an isoelectric point of greater than 7. The pH of the composition is in a range from about 1 to about 5. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Composition for tungsten CMP

The present invention is directed to an electrophoretic fluid which comprises additive particles. The concentration of the additive particles in the electrophoretic fluid does not exceed 25% by weight and the additive particles are not seen at the viewing side during operation of the display. The resulting fluid can improve optical performance of a display device, such as image stability and contrast ratio. The present invention is also directed to an electrophoretic display comprising the electrophoretic fluid.

Additive particles for improving optical performance of an electrophoretic display

The invention provides a chemical-mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises silicon carbide and silicon nitride.

Composition and method for polishing silicon carbide

The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains a bulky protecting ligand, an organic amine, an organic inhibitor, and water. The invention also provides methods for using the cleaning composition.

Cleaning composition following CMP and methods related thereto

The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains one or more quaternary ammonium hydroxides, one or more organic amines, one or more metal inhibitors, and water. The invention also provides methods for using the cleaning composition.

Cleaning composition and method for cleaning semiconductor wafers after CMP

The present invention is directed to an electrophoretic fluid which comprises additive particles. The concentration of the additive particles in the electrophoretic fluid is 2.5% to 25% by weight and the additive particles are not seen at the viewing side during operation of the display. The resulting fluid can improve optical performance of a display device, such as image stability and contrast ratio. The present invention is also directed to an electrophoretic display comprising the electrophoretic fluid.

The present invention is directed to a color display device in which each pixel can display at least five high-quality color states, and an electrophoretic fluid for such an electrophoretic display. In one aspect, the different types of particles exhibit different levels of attraction force to display different color states. In another aspect, the different types of particles exhibit different levels of mobility in different driving voltage ranges to display different color states.

Color display device

The present invention is directed to an electrophoretic fluid which comprises uncharged or lightly charged neutral buoyancy particles. The resulting fluid can improve not only image stability but also contrast ratio of a display device, without significantly affecting the switching speed. The present invention is also directed to an electrophoretic display comprising display cells filled with the electrophoretic fluid.

Additive for improving optical performance of an electrophoretic display

The invention is directed to an electrophoretic fluid which can improve display performance such as switching speed, vertical bistability and the ghosting effect, and also reduce display defects. The electrophoretic fluid comprises charged pigment particles dispersed in a mixture of isoparaffins.

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Aurora, IL, United States of America

Roman A Ivanov