Infineon Technologies Ag

Infineon Technologies Austria Ag

Romain Esteve

Dethard Peters

Ralf Siemieniec

Wolfgang Bergner

Roland Rupp

Thomas Aichinger

Daniel Kueck

Caspar Leendertz

Rudolf Elpelt

Ravi Keshav Joshi

Bernd Zippelius

Gerald Unegg

Florian Grasse

Hans-Joachim Schulze

Jens Peter Konrath

Shiqin Niu

Andreas Peter Meiser

Markus Kahn

Andreas Voerckel

Paul Ellinghaus

Anton Mauder

Werner Schustereder

Thomas Basler

Juergen Steinbrenner

Moriz Jelinek

Stefan Woehlert

Stefan Krivec

Jochen Hilsenbeck

Michael Hell

Stefan Kramp

Cédric Ouvrard

Kurt Pekoll

Richard Gaisberger

Hiroshi Narahashi

Victorina Poenariu

Gerald Reinwald

Grzegorz Lupina

Francisco Javier Santos Rodriguez

Wolfgang Werner

Gilberto Curatola

David Laforet

Cedric Ouvrard

Larissa Wehrhahn-Kilian

Thomas Ganner

Christian Strenger

Karlheinz Feldrapp

A semiconductor device includes a contact metallization layer that includes aluminum and is arranged on a semiconductor substrate, an inorganic passivation structure arranged on the semiconductor substrate, an organic passivation layer comprising a first part that is arranged on the contact metallization layer, and a second part that is arranged on the inorganic passivation structure, a first layer structure including a first part that is in contact with the contact metallization layer, a second part that is contact with the inorganic passivation structure, and a third part that is disposed on the semiconductor substrate laterally between the inorganic passivation structure and the organic passivation layer.

Semiconductor device and method for forming a semiconductor device

A silicon carbide substrate is provided that includes a drift layer of a first conductivity type and a trench extending from a main surface of the silicon carbide substrate into the drift layer. First dopants are implanted through a first trench sidewall of the trench. The first dopants have a second conductivity type and are implanted at a first implant angle into the silicon carbide substrate, wherein at the first implant angle channeling occurs in the silicon carbide substrate. The first dopants form a first compensation layer extending parallel to the first trench sidewall.

Silicon carbide device with compensation region and method of manufacturing

A semiconductor component includes: gate structures extending from a first surface into an SiC semiconductor body; a drift zone of a first conductivity type formed in the SiC semiconductor body; first mesas and second mesas arranged between the gate structures in the SiC semiconductor body; body areas of a second conductivity type arranged in the first mesas and the second mesas, the body areas each adjoining a first side wall of one of the gate structures; first shielding areas of the second conductivity type adjoining a second side wall of one of the gate structures; second shielding areas of the second conductivity type adjoining the body areas in the second mesas; and diode areas of the conductivity type of the drift zone, the diode areas forming Schottky contacts with a load electrode between the first shielding areas and the second shielding areas.

Silicon carbide field-effect transistor including shielding areas

First dopants are implanted through a larger opening of a first process mask into a silicon carbide body, wherein the larger opening exposes a first surface section of the silicon carbide body. A trench is formed in the silicon carbide body in a second surface section exposed by a smaller opening in a second process mask. The second surface section is a sub-section of the first surface section. The larger opening and the smaller opening are formed self-aligned to each other. At least part of the implanted first dopants form at least one compensation layer portion extending parallel to a trench sidewall.

Silicon carbide device with compensation layer and method of manufacturing

A semiconductor device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. A trench interval which defines a space between adjacent gate trenches extends in a second direction perpendicular to the first direction. Source regions of a first conductivity type formed in the SiC substrate occupy a first part of the space between adjacent gate trenches. Body regions of a second conductivity type opposite the first conductivity type formed in the SiC substrate and below the source regions occupy a second part of the space between adjacent gate trenches. Body contact regions of the second conductivity type formed in the SiC substrate occupy a third part of the space between adjacent gate trenches. Shielding regions of the second conductivity type formed deeper in the SiC substrate than the body regions adjoin a bottom of at least some of the gate trenches.

SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof

A silicon carbide device includes a silicon carbide body including a source region of a first conductivity type, a cathode region of the first conductivity type and separation regions of a second conductivity type. A stripe-shaped gate structure extends along a first direction and adjoins the source region and the separation regions. The silicon carbide device includes a first load electrode. Along the first direction, the cathode region is between two separation regions of the separation regions and at least one separation region of the separation regions is between the cathode region and the source region. The source region and the first load electrode form an ohmic contact. The first load electrode and the cathode region form a Schottky contact.

Silicon carbide device with Schottky contact

A semiconductor device includes a contact metallization layer arranged on a semiconductor substrate, an inorganic passivation structure arranged on the semiconductor substrate, and an organic passivation layer. The organic passivation layer is located between the contact metallization layer and the inorganic passivation structure, and located vertically closer to the semiconductor substrate than a part of the organic passivation layer located on top of the inorganic passivation structure.

A method of manufacturing semiconductor devices includes: forming source regions of a first conductivity type in a SiC-based semiconductor substrate, wherein dopants are introduced selectively through first segments of first mask openings in a first dopant mask and wherein a longitudinal axis of the first mask opening extends into a first horizontal direction; forming pinning regions of a complementary second conductivity type, wherein dopants are selectively introduced through second segments of the first mask openings and wherein the first and second segments alternate along the first horizontal direction; and forming body regions of the second conductivity type, wherein dopants are selectively introduced through second mask openings in a second dopant mask, wherein a width of the second mask openings along a second horizontal direction orthogonal to the first horizontal direction is greater than a width of the first mask openings.

Method of manufacturing a silicon carbide semiconductor device with trench gate structure and vertical pn junction between body region and drift structure

A semiconductor device includes a gate electrode and a gate dielectric. The gate electrode extends from a first surface of a silicon carbide body into the silicon carbide body. The gate dielectric is between the gate electrode and the silicon carbide body. The gate electrode includes a metal structure and a semiconductor layer between the metal structure and the gate dielectric.

Semiconductor device with silicon carbide body

A semiconductor component has a gate structure that extends from a first surface into an SiC semiconductor body. A body area in the SiC semiconductor body adjoins a first side wall of the gate structure. A first shielding area and a second shielding area of the conductivity type of the body area have at least twice as high a level of doping as the body area. A diode area forms a Schottky contact with a load electrode between the first shielding area and the second shielding area.

Embodiments of SiC devices and corresponding methods of manufacture are provided. In some embodiments, the SiC device has shielding regions at the bottom of some gate trenches and non-linear junctions formed with the SiC material at the bottom of other gate trenches. In other embodiments, the SiC device has the shielding regions at the bottom of the gate trenches and arranged in rows which run in a direction transverse to a lengthwise extension of the trenches. In still other embodiments, the SiC device has the shielding regions and the non-linear junctions, and wherein the shielding regions are arranged in rows which run in a direction transverse to a lengthwise extension of the trenches.

SiC power semiconductor device with integrated Schottky junction

A semiconductor device includes trench gate structures that extend from a first surface into a semiconductor body of silicon carbide. The trench gate structures include a gate electrode and are spaced apart from one another along a first horizontal direction and extend into a body region with a longitudinal axis parallel to the first horizontal direction. First sections of first pn junctions between the body regions and a drift structure are tilted to the first surface and parallel to the first horizontal direction. Source regions form second pn junctions with the body regions. A gate length of the gate electrode along a second horizontal direction orthogonal to the first horizontal direction is greater than a channel length between the first sections of the first pn junctions and the second pn junctions.

Silicon carbide semiconductor device with trench gate structure and vertical PN junction between body region and drift structure

A semiconductor device is provided that includes a silicon carbide substrate including a main surface at which a plurality of doped zones are formed in a junction termination extension zone of the silicon carbide substrate, the plurality of doped zones are arranged such that a lateral dopant concentration gradient is formed that decreases from a central region of the silicon carbide substrate to an outer edge region of the silicon carbide substrate.

Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone

SiC device and methods of manufacturing thereof

A semiconductor device includes trench structures that extend from a first surface into a semiconductor body. The trench structures include a gate structure and a contact structure that extends through the gate structure, respectively. Transistor mesas are between the trench structures. Each transistor mesa includes a body zone forming a first pn junction with a drift structure and a second pn junction with a source zone. Diode regions directly adjoin one of the contact structures form a third pn junction with the drift structure, respectively.

Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region

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Villach, Austria

Romain Esteve