Nxp B.v.

Imec Vzw

Romain Delhougne

Aurelie Humbert

Gouri Sankar Kar

Ludovic Goux

David Tio Castro

Vasile Paraschiv

Pierre Goarin

Stephan Heil

Davide Francesco Crotti

Hans Broekman

Judit G Lisoni

Johannes Theodorus Marinus Donkers

Luca Di Piazza

Michael Zandt

In one aspect, a method for manufacturing a three-dimensional (3D) semiconductor device is disclosed. It includes providing a vertical stack of alternating layers of a first layer type and a second layer type, and providing a first trench and a second trench adjacent the vertical stack. The first trench and the second trench can define a fin. The method further can include recessing the first layer type to form recesses extending into the fin, providing a first electrode in individual ones of the recesses, and providing a second electrode in the first trench and the second trench. The method further can include providing, for individual ones of the recesses, a lateral stack including a memory element, a middle electrode, and a selector element. The lateral stack can extend between the first electrode and the second electrode, thereby forming a memory device.

Three-dimensional semiconductor device and method of fabricating same

Disclosed is a semiconductor device comprising a substrate (); at least one semiconducting layer () comprising a nitride of a group 13 element on said substrate; and an ohmic contact () on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion () on the at least one semiconducting layer and a metal portion () adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal. A method of manufacturing such a semiconductor device is also disclosed.

Group 13 nitride semiconductor device and method of its manufacture

An electronic device (), comprises a first electrode (), a second electrode () and a convertible structure () connected between the first electrode () and the second electrode (), which convertible structure () is convertible between at least two states by heating, wherein the convertible structure () has different electrical properties in different ones of the at least two states, wherein the convertible structure () is curved in a manner to increase a length of a path of an electric current propagating through the convertible structure () between the first electrode () and the second electrode ().

Electronic device comprising a convertible structure

A read only memory is manufactured with a plurality of transistors () on a semiconductor substrate (). A low-k dielectric () and interconnects () are provided over the transistors (). To program the read only memory, the low-k dielectric is implanted with ions () in unmasked regions () leaving the dielectric unimplanted in masked regions (). The memory thus formed is difficult to reverse engineer.

Reverse engineering resistant read only memory

An electronic device (), the electronic device () comprises a substrate (), a first electrode () formed at least partially on the substrate (), a second electrode () formed at least partially on the substrate (), a convertible structure () connected between the first electrode () and the second electrode (), and a spacer element () connected between the first electrode () and the second electrode () and adapted for spacing the convertible structure () with regard to a surface of the substrate ().

Electronic device comprising a convertible structure, and a method of manufacturing an electronic device

A method of producing a multilayer structure is provided, wherein the method comprises forming a phase change material layer onto a substrate, forming a protective layer, forming a further layer on the protective layer, patterning the further layer in an first patterning step, patterning the protective layer and the phase change material layer by a second patterning step. In particular, the first patterning step may be an etching step using chemical etchants. Moreover, electrodes may be formed on the substrate before the phase change material layer is formed, e.g. the electrodes may be formed on one level, e.g. may form a planar structure and may not form a vertically structure.

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Muizen, Belgium

Romain Delhougne