Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique Et Aux Energies

Romain Coppard

Mohammed Benwadih

Olivier Jean Poncelet

Abdelkader Aliane

Romain Gwoziecki

Jamal Tallal

A heat-sensitive resistor with a negative or positive temperature coefficient comprises respectively an antimony-doped tin oxide-based resistive element or a carbon black-based resistive element, containing a polymer having a dielectric constant between 2 and 3, a molar mass between 50000 and 150000 g/mol, and a glass transition temperature Tg between 40 and 100&#xb0; C.

Temperature sensor with heat-sensitive paste

An electronic device having at least a first portion including a metal oxide that is in contact with a second portion including the said metal oxide, the first portion being semiconducting and the second portion being electrically insulating.

Electronic device and production method thereof

An organic CMOS circuit including a substrate having an N-type organic transistor and a P-type organic transistor formed thereon, the transistors respectively including a layer of N-type semiconductor material and a layer of P-type semiconductor material. A surface of each of the semiconductor material layers, opposite to the substrate, is covered with an anti-ultraviolet layer made of electrically-insulating material absorbing and/or reflecting ultra-violet rays.

Method for producing an organic CMOS circuit and organic CMOS circuit protected against UV radiation

A method of manufacturing a microelectronic device including a first component hybridized with a second component via electric interconnects, involves the steps of: (i) forming the first and second components, the second component being transparent to ultraviolet radiation at least in line with locations provided for the interconnects; (ii) forming interconnection elements including copper oxide on the second component at the locations provided for the interconnects; (iii) placing the first and second components on each other; and (iv) applying the ultraviolet radiation through the second component on the elements including copper oxide to implement an ultraviolet anneal converting copper oxide into copper.

Flip-chip hybridisation of two microelectronic components using a UV anneal

A microelectronic device includes a plurality of disconnected similar semiconducting portions, electrically isolated from each other and forming a semiconductor layer, at a spacing by a constant distance and with a shape parallel to the other portions. The microelectronic device also includes two electrodes arranged in contact with the semiconductor layer such that a maximum distance separating the two electrodes is less than the largest dimension of one of the semiconductor portions. The shape and dimensions of the semiconductor portions, the spacing between the semiconductor portions, the shape and dimensions of the electrodes and the layout of the electrodes relative to the semiconductor portions are such that at least one of the semiconductor portions electrically connects the two electrodes to each other. The largest dimensions of the semiconductor portions are perpendicular to the largest dimension of the electrodes, the electrodes being similar.

Growing community of inventors

Voiron, France

Romain Coppard