Centre National De La Recherche Scientifique

Electricite De France

Ecole Polytechnique

Totalenergies Se

Institut Photovoltaique D'ile De France (ipvf)

Romain Cariou

Wanghua Chen

Père Roca I Cabaroccas

The invention relates to a process for the preparation of a semiconductor material comprising at least one entirely monocrystalline semiconductor layer, said process comprising the steps of preparation of the surface of a first substrate to receive a monocrystalline silicon layer; deposition by Plasma-Enhanced Chemical Vapor Deposition (PECVD) of a layer of monocrystalline silicon by epitaxial growth with a growth rate gradient on the silicon layer monocrystalline obtained in step (i); and epitaxial growth of a monocrystalline layer of a semiconductor material on the monocrystalline silicon layer obtained in step (ii), to thus obtain a material comprising at least one entirely monocrystalline semiconductor layer. The invention also relates to a multilayer material comprising a monocrystalline layer of semiconductor material.

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Bourg-la-Reine, France

Romain Cariou