Alcatel Lucent

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Alcatel

Avanex Corporation

Nokia Solutions and Networks Oy

Romain Brenot

Guang-Hua Duan

Francis Poingt

Mohand Achouche

François Lelarge

Thierry Hessler

Gabriel Charlet

Guilhem De Valicourt

Bruno Mourey

Jeremie Renaudier

Nicolas Chimot

Alain Accard

Alban Le Liepvre

Jean-Guy Provost

Frédéric Pommereau

Christophe Caillaud

Genevieve Glastre Lemaitre

Alexandre Garreau

Benjamin Rousseau

Jérémie Renaudier

An amplification device includes an element for splitting an input optical signal into first and second optical signals having first and second polarization modes, first and second amplification stages each including polarized SOAs for amplifying the first and second optical signals depending on driving currents, an intermediate processing stage for compensating optical characteristics of the optical gain bandwidth of the first amplification stage depending on driving currents, an element for combining the first and second optical signals outputted by the second amplification stage to produce an output optical signal, and a control means producing the driving currents depending on information representative of powers of the first and second optical signals before the polarized SOAs of each amplification stage and on a targeted power of the output optical signal.

Amplification device with amplification stages with polarized SOAs and processing stage, for amplifying optical signals in a WDM transmission system

The telecommunications network node linking a metropolitan area network, including at least one optical link connecting the nodes, with at least one access network, includes an electronic card that enables the aggregation of traffic from multiple access networks, a transmitter capable of receiving an electrical signal from the electronic card and of transmitting an optical packet to the metropolitan area network, a circulator capable of extracting a stream of multiplexed optical packets from the optical link and of inserting a stream of multiplexed optical packets into the optical link, and a reflective switching matrix receiving a stream of multiplexed optical packets from among which it selects and detects those intended for the access network. The reflective switching matrix includes a POADM optical packet add/drop multiplexer that receives multiplexed optical packets and transmits demultiplexed optical packets, and at least one RSOA reflective semiconductor optical amplifier capable of receiving a demultiplexed optical packet, which includes three sections.

Telecommunications network node linking a metropolitan area network with at least one access network

The present invention concerns a method for controlling the emitting wavelength of a laser source () for a passive optical network, the laser source () comprising:

Method for controlling the wavelength of a laser source

Optical transceiver

A monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a deep ridge optical receiver comprising such structure are disclosed.

Monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a photodetector

The present document relates to passive optical networks (PON). More particularly but not exclusively, it relates to the use of a reflective semiconductor optical amplifier (RSOA) for amplifying signals in a Gigabit PON (GPON) or WDM-PON. An apparatus configured to amplify light at different wavelengths in an optical network is described. The apparatus comprises a first active material configured to amplify light at a first wavelength and a second active material configured to amplify light at a second wavelength. Furthermore, the apparatus comprises a first reflector which separates the first and second active materials and which is configured to reflect light at the first wavelength and which is configured to be substantially transparent to light at the second wavelength. In addition, the apparatus comprises a second reflector adjacent the second active material opposite to the first reflector which is configured to reflect light at the second wavelength.

Reflective semiconductor optical amplifier for optical networks

Method of manufacturing an optical device, and an optical device, the optical device having one or more layers () of quantum-dots located in-between barrier layers (). A spacer layer () is grown on a barrier layer (), such that the spacer layer () is adapted for substantially blocking strain fields induced by quantum-dot layers, thereby producing a smooth growth front for a subsequent barrier layer ().

Optical device having a quantum-dot structure

A stabilised gain semiconductor optical amplifier (CG-SOA) includes and active waveguide () comprising an amplification medium (), extending in longitudinal (Z), lateral (X) and vertical (Y) directions, and coupled to a laser oscillation structure comprising at least two resonant cavities () extending in first (D) and second (D) directions which are different from the longitudinal direction (Z) of the active waveguide () and arranged in such a way as to permit the establishment of laser oscillations having at least two different relaxation oscillation frequencies.

Semiconductor optical amplifier with lateral and distributed gain stabilisation

The field of the invention is that of optoelectronic devices for receiving high bit rate digital optical signals for telecommunications applications, comprising an optical amplifier and a photoreceiver diode. Generally, the two optical amplification and optical-electrical conversion functions are integrated in a common component, resulting in lower production costs, smaller footprint and improved reliability. To optimize the conversion device as a whole, it is demonstrated that there must be an active area of small thickness in the amplifier part and greater thickness in the conversion part. The invention proposes to implement this function by means of a structure comprising a diluted multimode waveguide common to the two amplification and reception sections, the first active area and the second area being disposed so as to ensure a coupling by evanescent waves with said diluted multimode waveguide.

Integrated optoelectronic device including a semiconductor optical amplifier and a photodiode

Growing community of inventors

Palaiseau, France

Romain Brenot