U.S. Philips Corporation

Rolf Six

Claus-Peter Klages

Udo Bringmann

Lothar Schafer

Method of depositing micro-crystalline solid particles from a vapor phase containing a carbonaceous gas using chemical vapor deposition (CVD), in which the solid particles to be deposited are deposited at a pressure in the range from 10.sup.-5 to 1 bar onto a substrate which has been heated to a temperature in the range from 450.degree. to 1200.degree. C. and in which the chemical vapor phase reactions are effected in the gas phase which is thermally energized by means of a resistance heat conductor, a resistance heat conductor made of a carbide of at least one transition metal from the secondary group IVa to VIa of the periodic element system (PSE) with a carbon content which substantially corresponds to a stoichiometrical composition of the carbide and having a melting point of &gt;2000.degree. C. being used.

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Munich, Georgia

Rolf Six