Advanced Micro Devices Corporation

Globalfoundries Inc.

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Interuniversitair Micro-Elektronica Centrum Vzw

Rolf Seltmann

Uwe Schulze

Jan Raebiger

Heiko Wagner

Jens Busch

Rolf Stephan

Anna Maria Minvielle

Bernd Schulz

Rene Wirtz

Heinz Kuck

Francois Weisbuch

Joerg Weigang

Frank Kahlenberg

Uwe Knappe

Rainer Pforr

Philipp Jaschinsky

Roberto Schiwon

Fritjof Hempel

Jens Krause

Steve Wittekoek

Sirko Kramp

Stefan Roling

Jorg Paufler

Robert Barlovic

Disclosed are methods of advanced process control (APC) for particular processes. A particular process (e.g., a photolithography or etch process) is performed on a wafer to create a pattern of features. A parameter is measured on a target feature and the value of the parameter is used for APC. However, instead of performing APC based directly on the actual parameter value, APC is performed based on an adjusted parameter value. Specifically, an offset amount (which is previously determined based on an average of a distribution of parameter values across all of the features) is applied to the actual parameter value to acquire an adjusted parameter value, which better represents the majority of features in the pattern. Performing this APC method minimizes dimension variations from pattern to pattern each time the same pattern is generated on another region of the same wafer or on a different wafer using the particular process.

Advanced process control methods for process-aware dimension targeting

In an immersion lithography tool, the status of the immersion hood surface may be estimated on the basis of an inline detection system that generates optical measurement data. For example, a digital imaging system may be implemented in order to obtain optical measurement data without requiring exposure of the interior of the lithography tool to ambient air. In other cases, other optical measurement techniques, such as FTIR and the like, may be applied.

Method and system for detecting particle contamination in an immersion lithography tool

Variations in critical dimensions of circuit features of sophisticated semiconductor devices may be reduced by efficiently extracting mask and/or imaging tool specific non-uniformities with high spatial resolution by using measured intensity values and simulated intensity values. For example, a tool internal radiation sensor may be used for measuring the intensity of an image of a lithography mask, while a simulated intensity enables eliminating the mask pattern specific intensity contributions. In this manner, high spatial resolution of the corresponding correction map may be obtained without undue effort in terms of man power and measurement tool resources.

Control of critical dimensions in optical imaging processes for semiconductor production by extracting imaging imperfections on the basis of imaging tool specific intensity measurements and simulations

Metrology data associated with a plurality of workpieces processed at a selected operation in the process flow including a plurality of operations is retrieved. A processing context associated with each of the workpieces is determined. The processing context identifies at least one previous tool used to perform an operation on the associated workpiece prior to the selected operation. A plurality of performance metrics is determined for a plurality of tools capable of performing the selected operation based on the metrology data. Each performance metric is associated with a particular tool and a particular processing context. A set of the performance metrics is identified for the plurality of tools having a processing context matching a processing context of a selected workpiece awaiting performance of the selected operation. The selected workpiece is dispatched for processing in a selected one of the plurality of tools based on the set of performance metrics.

Method and apparatus for dispatching workpieces to tools based on processing and performance history

By taking into consideration the combination of the substrate holders in various lithography tools used during the imaging to two subsequent device layers, enhanced alignment accuracy may be accomplished. Furthermore, restrictive tool dedications for critical lithography processes may be significantly relaxed by providing specific overlay correction data for each possible process flow, wherein, in some illustrative embodiments, a restriction of the number of possible process flows may be accomplished by implementing a rule for selecting a predefined substrate holder when starting the processing of an associated group of substrates.

Method and system for reducing overlay errors in semiconductor volume production using a mixed tool scenario

By taking into consideration tool-specific distortion signatures and reticle-specific placement characteristics in an alignment control system, the control quality of sophisticated APC strategies may be significantly enhanced. Respective correction data may be established on the basis of any combinations of tool/reticles and layers to be aligned to each other, which may modify the respective target values of alignment parameters used for controlling the alignment process on the basis of standard overlay measurement data obtained from dedicated overlay marks.

Method and system for reducing overlay errors within exposure fields by APC control strategies

By automatically estimating the focus status of individual substrates or lots on the basis of focus-specific tool information obtained from the exposure tool, such as tilt angle ranges used during the automatic focusing procedures, possible hot spot errors may be detected highly efficiently prior to releasing the substrates to a subsequent etch process. Consequently, yield losses may be reduced. Moreover, possible error sources for hot spot errors may be identified.

Method and system for automatically detecting exposed substrates having a high probability for defocused exposure fields

The electrical performance of sub-devices is detected and the corresponding measurement data is used to control a lithography process so as to compensate for any type of process variations during a manufacturing sequence.

Method and system for increasing product yield by controlling lithography on the basis of electrical speed data

An advanced control system for a photolithography tool that receives measurement data relating to inline parameters varying with position on a substrate surface. The position sensitive measurement data is used to establish a position dependent target offset for an exposure map, thereby effectively compensating for substrate non-uniformities. Since the inline measurement data is available significantly earlier in comparison to electrical measurement data of a completed circuit element, a more accurate exposure map may be obtained taking into account the process history of the substrates.

Method and system for improving exposure uniformity in a step and repeat process

A technique is disclosed that allows alignment of substrates on a run-to-run basis by using the position data of one or more previously aligned substrates to determine a setpoint of a pre-alignment process for one or more subsequent substrates. The setpoint may also be determined on the basis of a predefined characteristic of the substrates to be aligned.

Method and system for improving the efficiency of a mechanical alignment tool

The invention provides a method and apparatus for reducing the variance of critical dimensions in a semiconductor device, by providing a method and apparatus for measuring lens and reticle error and then providing a method and apparatus for compensating for the error. The critical dimension of a die is measured and used to create a critical dimension function CD(x,y), where y is the direction of scan and x is perpendicular to the direction of scan, for a stepper scanner. CD(x,y) is used to determine the energy distribution E(x,y). E(x,y) is separated into orthogonal functions E(x) and E(y). Changes in the exposure energy or Gray filters or other means are used to compensate for the changes in E(x) and E(y).

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Dresden, Germany

Rolf Seltmann