Acreo Ab

Thin Film Electronics Asa

Oboe Ipr Ab

Rolf Magnus Berggren

Hans Gude Gudesen

Thomas Kugler

David A Nilsson

Tommi Remonen

Robert Forchheimer

Miaioxiang M Chen

Marten Armgarth

M&aring;rten Armgarth

Per-Erik Nordal

Geirr Ivarsson Leistad

Edwin Jager

Joakim Isaksson

Daniel Simon

Klas Tybrandt

Agneta Richter Dahlfors

Johan Roger Axel Karlsson

Bengt Gustafsson

Peter Kjäll

Miaoxiang Chen

Mårten Armgarth

Karl P Andersson

Agneta Richter-Dahlfors

Bengt Goran Gustafsson

Johan Roger Karlsson

David Nilsson

Peter KJÄLL

Daniel T Simon

A device for electrically controlled transport of ions between a source and a target electrolyte, including: a first source electrode and a first target electrode, each capable of conducting ions and electrons, wherein the source electrode is arranged to receive ions from the source electrolyte and the target electrode is arranged to release ions to the target electrolyte.

Electrically controlled ion transport device

A circuitry for differential amplifying, logical inversion, NAND and/or NOR operations is provided, which includes at least one depletion mode transistor having JFET characteristics. A method for determining the properties of an electrochemical circuitry is provided, including at least one semi-finished transistor, by applying a solidified electrolyte to selected sets of electrochemically active transistor elements is also provided.

Circuitry and method

Methods of producing electrochemical transistor devices are provided, wherein a solidified electrolyte is arranged in direct contact with at least a portion of an organic material having the ability to electrochemically altering its electrical conductivity through change of redox state thereof, such that a current between a source contact and a drain contact of the transistor is controllable by way of a voltage applied to a gate electrode. A electrochemical transistor device is also provided, wherein an ion isolative material is provided between a solidified electrolyte and an organic material having ability to electrochemically altering its redox state, such that a transistor channel of the transistor is defined thereby.

Electrochemical device and methods for producing the same

Methods of producing electrochemical transistor devices are provided, wherein a solidified electrolyte is arranged in direct contact with at least a portion of an organic material having the ability to electrochemically altering its electrical conductivity through change of redox state thereof, such that a current between a source contact and a drain contact of the transistor is controllable by a voltage applied to a gate electrode. A electrochemical transistor device is also provided, wherein an ion isolative material is provided between a solidified electrolyte and an organic material having the ability to electrochemically altering its redox state, such that a transistor channel of said transistor is defined thereby.

Electrochemical device including a channel of an organic material, a gate electrode, and an electrolyte therebetween

An electrochemical transistor device is provided, comprising a source contact, a drain contact, at least one gate electrode, an electrochemically active element arranged between, and in direct electrical contact with, the source and drain contacts, which electrochemically active element comprises a transistor channel and is of a material comprising an organic material having the ability of electrochemically altering its conductivity through change of redox state thereof, and a solidified electrolyte in direct electrical contact with the electrochemically active element and said at least one gate electrode and interposed between them in such a way that electron flow between the electrochemically active element and said gate electrode(s) is prevented. In the device, flow of electrons between source contact and drain contact is controllable by means of a voltage applied to said gate electrode(s). Also provided are circuits incorporating such electrochemical transistor devices and processes for the production of such devices.

Electrochemical device

An electrochemical transistor device is provided, comprising a source contact, a drain contact, at least one gate electrode, an electrochemically active element arranged between, and in direct electrical contact with, the source and drain contacts, which electrochemically active element comprises a transistor channel and is of a material comprising an organic material having the ability of electrochemically altering its conductivity through change of redox state thereof, and a solidified electrolyte in direct electrical contact with the electrochemically active element and said at least one gate electrode and interposed between them in such a way that electron flow between the electrochemically active element and said gate electrode(s) is prevented. In the device, flow of electrons between source contact and drain contact is controllable by means of a voltage applied to said gate electrode(s).

A pixel device comprising an electrochemical transistor device with a source and a drain contact; a gate electrode; an electrochemically active element in direct electrical contact with source and drain contacts, and comprising a transistor channel comprising an organic material; and a solidified electrolyte in direct electrical contact with the active element, and an electrochromic device comprising an electrochromic element comprising a material conducting in at least one oxidation state and an electrochromic material; a solidified electrolyte layer in direct electrical contact with the electrochromic element; and two electrodes for application of a voltage and in direct electrical contact with a component selected from the electrolyte layer(s); in which one of the source and drain contacts of the electrochemical transistor device is in electrical contact with one of the electrodes of the electrochromic device. Also provided are matrices of pixel devices, pixelated displays incorporating the matrices, and process thereof.

Electrochemical pixel device

A supported or self-supporting electrochromic device is provided having (a) at least one electrochromic element comprising (i) at least one material that is electrically conducting in at least one material that is electrically conducting in at least one oxidation state and (ii) at least one electrochromic material, wherein said materials (i) and (ii) can be the same or different, (b) at least one layer of a solidified electrolyte which is in direct electrical contact with said electrochromic element, and (c) at least two electrodes adapted to be electrically connected to a voltage supply so as to create a difference in potential therebetween, with each of said electrodes being in direct electrical contact with at least one of said electrolyte layer(s) and not in direct electrical contact with said electrochromic element. Displays incorporating such a device, as well as processes for the production of such a device are contemplated. A method for addressing an electrochemically active element also is provided.

Electrochromic device

A field-effect transistor is made with electrodes ( ) and isolators ( ) in vertically provided layers, such that at least the electrodes ( ) and the isolators ( ) form a step ( ) oriented vertically relative to the first electrode ( ) or the substrate ( ). Implemented as a junction field-effect transistor (JFET) or a metal-oxide semiconducting field-effect transistor (MOSFET) the electrodes ( ) forming respectively the drain and source electrode of the field-effect transistor or vice versa and the electrode ( ) the gate electrode of the field-effect transistor. Over the layers in the vertical step ( ) an amorphous, polycrystalline or microcrystalline inorganic or organic semiconductor material is provided and forms the active semiconductor of the transistor contacting the gate electrode ( ) directly or indirectly and forming a vertically oriented transistor channel ( ) of the p or n type between the first ( ) and the second ( ) electrode. In a method for fabrication of a field effect transistor a vertical step ( ) is formed by a means of a photolithographic process and a soluble amorphous active semiconductor material ( ) is deposited over the first electrode ( ) and the vertical step ( ) such that a vertically oriented transistor channel between the drain and source electrode ( ) is obtained. In a JFET the semiconductor material ( ) contacts the gate electrode ( ) directly. In a MOSFET a vertically oriented gate isolator ( ) is provided between the gate electrode ( ) and the semiconductor material ( ).

Field-effect transistor

A device for providing addressability in an apparatus including one or more volume elements which together with the device form part of a matrix in the apparatus. The device establishes an electrical connection to specific cells by electrodes in the matrix and thereby defining a cell in the volume element. The device includes at least three sets of plural strip-like electrodes, the strip-like electrodes of each set being provided in substantially parallel relationship to each other in a two-dimensional and planar layer forming an additional part of the matrix. A set of strip-like electrodes in one layer is oriented at an angle to the projected angle of orientation of the electrode sets in proximal neighboring layers onto this one layer, such that the sets of strip-like electrodes in proximal neighboring layers exhibit a mutual non-orthogonal relationship.

Multidimensional addressing architecture for electronic devices

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Vreta Kloster, Sweden

Rolf Magnus Berggren