Unisearch Limited

Qucor Pty Limited

Rolf Brenner

Alexander Rudolf Hamilton

Andrew Steven Dzurak

Robert Graham Clark

Michelle Yvonne Simmons

Mladen Mitic

Lars Oberbeck

Neil Jonathan Curson

Toby Hallam

Frank J Ruess

K E Johnson Goh

Tilo Marcus Buehler

Nancy Ellen Lumpkin

Rita Paytricia McKinnon

This invention concerns the fabrication of nanoscale and atomic scale devices. The method involves creating one or more registration markers. Using a SEM or optical microscope to form an image of the registration markers and the tip of a scanning tunnelling microscope (STM). Using the image to position and reposition the STM tip to pattern the device structure. Forming the active region of the device and then encapsulating it such that one or more of the registration markers are still visible to allow correct positioning of surface electrodes. The method can be used to form any number of device structures including quantum wires, single electron transistors, arrays or gate regions. The method can also be used to produce 3D devices by patterning subsequent layers with the STM and encapsulating in between.

Fabricating nanoscale and atomic scale devices

A silicon substrate is coated with one or more layers of resist. First and second circuit patterns are exposed in sequence, where the second pattern crosses the first pattern. The patterned resist layers are developed to open holes which extend down to the substrate only where the patterns cross over each other. These holes provide a mask suitable for implanting single phosphorous ions in the substrate, for a solid state quantum computer. Further development of the resist layers provides a mask for the deposition of nanoelectronic circuits, such as single electron transistors, aligned to the phosphorous ions.

Fabrication of nanoelectronic circuits

Growing community of inventors

Chatswood, Australia

Rolf Brenner