International Business Machines Corporation

Rolf Allenspach

Jonathan Zanhong Sun

Bruce David Terris

Stuart Stephen Papworth Parkin

Johannes Georg Bednorz

John Casimir Slonczewski

Chung H Lam

Urs T Duerig

Gerhard Ingmar Meijer

Daniel Widmer

Richard Stutz

Carl Zinoni

Daniel Christopher Worledge

Anthony J Annunziata

See-Hun Yang

Wolfgang F Weber

Andreas Bischof

Peter Vettiger

Gerd K Binnig

Eric Edward Fullerton

Jean Fompeyrine

Pierre-Olivier Jubert

Walter Heinrich Riess

Walter Haeberle

Timothy J Moran

Gian R Von Salis

Reto R Schlittler

Gian R Salis

Ingmar Meijer

Peter Gruetter

Michele Aldeghi

Mathias Klaeui

Hans-Christof Otto Siegmann

Christian Horst Back

Jean Pierre Locquet

Maria Seo

A qubit device comprising: a semiconductor substrate layer; a semiconductor substrate layer; a set of control gates defining one or more lines of two or more quantum dots along the substrate layer, each quantum dot being configured for holding a qubit; and a magnet system providing at the substrate layer a superposition of external and local magnetic fields such that qubit spin resonance frequencies of each pair of adjacent quantum dots in each line are different, the magnet system comprising an external magnetic field source for providing the external magnetic field and comprising a magnet on top of every other quantum dot for providing the local magnetic field.

Scalable magnetically controlled qubit

A spin-transfer torque magnetic tunnel junction includes a layer stack with a pinned magnetic layer and a free magnetic layer, and an insulating barrier layer there-between. Each of the magnetic layers has an out-of-plane magnetization orientation. The junction is configured so as to allow a spin-polarized current flow generated from one of the two magnetic layers to the other to initiate an asymmetrical switching of the magnetization orientation of the free layer. The switching is off-centered toward an edge of the stack. The junction may allow a spin-polarized current flow that is off-centered toward an edge of the stack, from one of the two magnetic layers to the other, to initiate the asymmetrical switching. Related devices and methods of operation are also provided.

Spin transfer torque magnetic tunnel junction with off-centered current flow

The invention is directed to a method of manufacturing a ferromagnetic device (), having an elongated structure extending along a longitudinal direction (), comprising a ferromagnetic material, wherein a transverse cross section () of the ferromagnetic material, perpendicular to said longitudinal direction, is designed to provide a domain wall velocity above the Walker breakdown limit of the ferromagnetic material. In particular, at least a portion (-) of a peripheral contour of the ferromagnetic material forms, in the transverse cross-section (), a non-orthogonal convex set. For example, the whole peripheral contour may realize a (non-orthogonal) convex polygon.

Ferromagnetic device providing high domain wall velocities

The invention is directed to a ferromagnetic device (), having an elongated structure extending along a longitudinal direction (), comprising a ferromagnetic material, wherein a transverse cross section () of the ferromagnetic material, perpendicular to said longitudinal direction, is designed to provide a domain wall velocity above the Walker breakdown limit of the ferromagnetic material. In particular, at least a portion (-) of a peripheral contour of the ferromagnetic material forms, in the transverse cross-section (), a non-orthogonal convex set. For example, the whole peripheral contour may realize a (non-orthogonal) convex polygon.

A spin-current switched magnetic memory element includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers. The plurality of magnetic layers includes at least one composite layer.

Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element

A magnetic random access memory (MRAM) device has read word lines, write word lines, bit lines, and a plurality of memory bit cells interconnected via the read word lines, the write word lines and the bit lines. Each memory bit cell has a fixed ferromagnetic layer element and a free ferromagnetic layer element separated by a dielectric tunnel barrier element. Each write word line and a respective number of free ferromagnetic layer elements are formed as a single continuous ferromagnetic line.

Magnetic random access memory device and method for producing a magnetic random access memory device

A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, in which the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure.

A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.

A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400&#xb0; C.

Non-volatile resistance switching memory

Processes, apparatus and systems for depositing a switching material that is switchable between conductivity states and where the states are persistent. The invention further relates to a microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400&#xb0; C.

A method for manipulating a quantum system comprises at least one mobile charge carrier with a magnetic moment. The method comprises the steps or acts of applying magnetic field to the charge carrier. The magnetic is spatially non-homogeneous. The method also comprises bringing the charge carrier into an oscillatory movement along a path. The magnetic field depends on the position of the charge carrier on said path. The oscillatory movement may be caused by electrostatic interaction with gate electrodes. Due to this approach, thus, in a magnetic moment resonance process the conventional oscillating magnetic field is replaced by an oscillating electric field which is locally transformed into a magnetic field by the Coulomb interaction that displaces the charge carrier wave function within an inhomogeneous magnetic field or in and out of a magnetic field.

Method of manipulating a quantum system comprising a magnetic moment

A memory element, logic element or sensor element is provided, which element comprises a switchable first magnetic component exhibiting a ferromagnetic or ferrimagnetic behaviour and comprising at least two magnetic domains with different magnetization directions and a domain wall between the magnetic domains. The element has electrodes operable to induce an electric current which at least partially flows through the domain wall with a current density high enough to cause the domain wall to reversibly propagate within the magnetic component. The first magnetic component may belong to a layered system further including a second magnetic component with a fixed magnetization and a non-magnetic spacer layer arranged between the first and second magnetic component. In such a layered system, the electrical resistance may depend on the relative orientation of the magnetization directions of the first and second magnetic component, due to the GMR or TMR effect.

Growing community of inventors

Adliswil, Switzerland

Rolf Allenspach