Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Osram Opto Semiconductors Gmbh

Eclypia

Rolf Aidam

Korbinian Perzlmaier

Matthias Peter

Badhise Ben Bakir

Jürgen Off

Simeon Katz

Jean-Guillaume Coutard

Kai Gehrke

Sébastien Barnola

Rüdiger Quay

Jürgen Däubler

Thorsten Passow

Taek Lim

Lutz Kirste

Ruediger Quay

Kevin Jourde

A photoacoustic detecting device comprises a housing which houses: a lighting module, a photoacoustic cell, comprising an surface contact intended to be placed in contact with the medium to analyse, a photoacoustic cavity extending from the surface contact to a top of the photoacoustic cell, at least one window closing the top of the photoacoustic cell or the contact surface of the photoacoustic cell, at least one subwavelength pattern located on a surface of said window, said subwavelength pattern being configured to focus the light beam on an surface of interest of the medium to analyse, a sensor, linked to the cavity, the sensor being configured to detect a generated signal, said generated signal being generated in the photoacoustic cavity by a photothermic effect in the medium, and wherein the photoacoustic cell, the window and the subwavelength pattern are formed on a single silicon wafer.

Photoacoustic detecting device

A reflective contact layer system and a method for forming a reflective contact layer system for an optoelectronic component are disclosed. In an embodiment the component includes a first p-doped nitride compound semiconductor layer, a transparent conductive oxide layer, a minor layer and a second p-doped nitride compound semiconductor layer arranged between the first p-doped nitride compound semiconductor layer and the transparent conductive oxide layer, wherein the second p-doped nitride compound semiconductor layer has N-face domains at an interface facing the transparent conductive oxide layer, and wherein the N-face domains at the interface have an area proportion of at least 95%.

Reflective contact layer system for an optoelectronic component and method for producing same

A semiconductor structure includes a barrier layer, a spacer structure, and a channel layer. The barrier layer includes a group III nitride. The spacer structure includes first and second aluminum nitride layers and an intermediate layer. The intermediate layer includes a group III nitride and is between the first and second aluminum nitride layers. The intermediate layer has a first free charge carrier density at an interface with the second aluminum nitride layer. The spacer structure is between the barrier layer and the channel layer. The channel layer includes a group III nitride and has a second free charge carrier density at an interface with the first aluminum nitride layer of the spacer structure. The first aluminum nitride layer, the intermediate layer, and the second aluminum nitride layer have layer thicknesses so the first free charge carrier density is less than 10% of the second free charge carrier density.

Semiconductor structure

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Wyhl, Germany

Rolf Aidam