Leybold Systems Gmbh

Leybold Aktiengesellschaft

Rolf Adam

Anton Dietrich

Rainer Ludwig

Dan M Goebel

Klaus Hartig

Hans Aichert

Michael Liehr

Reiner Kukla

Robert W Conn

Gregor A Campbell

Martin Bahr

J&ouml;rg Krempel-Hesse

Martin B&auml;hr

Gonde Dittmer

Hans Betz

Max Mayr

Friedrich Hass

Alfred Thelen

A sputtering cathode with a flat plate-shaped target (,) and a tub-shaped yoke (,) arranged behind the target (,), with center ridge (,) and with magnets (,) for generating an enclosed tunnel of arc-shaped curved field lines (,) in front of the target surface, as well as with three sheet metal cutouts (,) or groups of partial cutouts inserted into the plane between the target (,) and the end faces (,) of the tub rim of the yoke (,) facing the target (,), all the sheet metal cutouts (,) together form two gaps (a,b) extending roughly parallel to the end faces (,), wherein the magnets (,) are each incorporated or inserted into the yoke bottom and the side surfaces of the magnets (,) facing towards and away from the target (,) run flush with the yoke bottom.

Sputtering cathode

In a sputter cathode with a plate-shaped target (8) and with a trough-shaped yoke (3), arranged behind the target (8), with middle web (5) and with magnets (7, 7', . . . ) for producing a closed tunnel of field lines (15, 15', . . . ) curved in an arc in front of the target surface as well as with three sheet-metal blanks (9, 10, 11) consisting of one layer of a compound plate e.g. of an aluminum/iron compound plate, which blanks are placed into the plane between the target (8) and the front surfaces (12, 13) of the trough edge of the yoke (3), which front surfaces face the target (8), all sheet-metal blanks (9, 10, 11) of magnetically conductive material together form gaps (a, a') extending approximately parallel to the front surfaces (12, 13), which gaps (a, a') are filled out between the sheet-metal blanks (9, 10, 11) by the other layer (21) of the compound plate.

Sputter cathode

A sputtering cathode based on the magnetron principle, with a target of the material to be sputtered having a minimum of one component, with a magnetic system located beneath the target and having magnetic sources of different polarization which form a minimum of one self-enclosed tunnel of arcuate magnetic lines of force, having the poles of the sources facing away from the target connected to each other via a magnetic yoke made of a material of low retentivity, the bodies forming the sources of the magnetic fields being right prisms, and preferably right parallelepipeds, the base edges of which run parallel to the target plane, with the magnetic lines of force of the sources running at inclined angles relative to the base surfaces of the bodies.

Sputtering cathode based on the magnetron principle

In a process for coating substrates 1, 35, for example aluminum ceramic plates 1 or polyimide films 35 with copper by means of a device including a direct current source 10 which is connected to a sputtering cathode 5, 30, 31 disposed in a process chamber 15, 15a, 32 which can be evacuated and this cathode electrically interacts with a copper target 3, 33, 34 which can be sputtered and the sputtered particles are deposited on the substrate 1, 35 whereby the argon gas can be introduced into the process chamber 15, 15a, 32 which can be evacuated, an oxygen inlet 20, 39 is provided in addition to the argon inlet 21, 40, whereby the supply of oxygen can be controlled via a valve 19, 43 inserted in the feed line 23, 39 and the amount of oxygen can be metered such that during a first process phase a copper oxide layer which functions as a bonding agent forms on the substrate 1, 35 and after adjusting the argon atmosphere in the process chamber 15, 15a, 32 pure copper is deposited as an electrically conductive layer.

Process for coating a dielectric substrate with copper

An apparatus to apply materials to a substrate disposed in a vacuum chamber is disclosed. A separate generator chamber containing an electron emitter is connected to the vacuum chamber by a process chamber so that a plasma of controllable cross-sectional shape and large area is formed and guided by magnets toward a target system. Positive ions may be accelerated against the target by applying an adjustable negative voltage.

Method and apparatus for the application of materials

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Hanau, Germany

Rolf Adam