Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Oledgmbh

Roland Zeisel

Jens Ebbecke

Michael Binder

Anton Vogl

Tobias Meyer

Simeon Katz

Andreas Rückerl

Robert Schulz

Andreas Rueckerl

Michael Bergler

Berthold Hahn

Karl Engl

Christian Leirer

Johannes Baur

Petrus Sundgren

Clemens Vierheilig

Johannes Völkl

Robert Walter

Raimund Oberschmid

Kerstin Neveling

Christine Rafael

Johannes Voelkl

Rainer Hartmann

Holger Specht

Maja Hackenberger

Michael Dietz

Moses Richter

Oliver Kus

In an embodiment, an optoelectronic semiconductor component includes a semiconductor layer sequence with a doped first layer, a doped second layer, an active zone configured to generate radiation by electroluminescence between the first layer and the second layer, and a side surface extending transversely to the active zone and delimiting the semiconductor layer sequence in a lateral direction, two electrodes for electrical contact between the first and second layers and a cover layer located on the side surface in a region of the first layer, wherein the cover layer is in direct contact with the first layer, wherein a material of the cover layer alone and its direct contact with the first layer are configured to cause a formation of a depletion zone in the first layer, wherein the depletion zone comprises a lower concentration of majority charge carriers compared to a rest of the first layer, wherein the cover layer comprises a metal or a metal compound, and wherein the cover layer forms a Schottky contact with the first layer.

Optoelectronic semiconductor component

An optoelectronic component may include a support and multiple optoelectronic semiconductor chips that can be actuated individually and independently of one another. Each semiconductor chip may include a semiconductor layer sequence. Each semiconductor chip may have an electrically insulating passivation layer on the respective lateral surface of the semiconductor layer sequence. The semiconductor chip(s) are assigned to a first group, which may be paired with a common boundary field generating device arranged on the passivation layer face facing away from the semiconductor layer sequence at an active zone for each semiconductor chip of the first group. The boundary field generating device is designed to at least temporarily generate an electric field in the boundary regions of the active zone so that a flow of current through the semiconductor layer sequences can be controlled in the boundary regions during the operation of the semiconductor chips of the first group.

Optoelectronic component and method for producing an optoelectronic component

A method for electrically contacting components in a semiconductor wafer includes providing a flexible board comprising a first main surface on which a plurality of conductor tracks are arranged, positioning the board with respect to a semiconductor wafer such that the first main surface of the board faces the semiconductor wafer, the board is bent and pressed onto the semiconductor wafer in such a way that contact elements of a plurality of components arranged in a row in the semiconductor wafer come into contact with the conductor tracks, and electrical signals are applied to the components through the conductor tracks.

Method and device for electrically contacting components in a semiconductor wafer

A device for processing a multiplicity of semiconductor chips in a wafer assemblage includes an electrically conductive carrier for contacting rear contacts of the semiconductor chips, an electrically conductive film for contacting front contacts of the semiconductor chips that are situated opposite the rear contacts, and a squeegee, which is displaceable relative to the film and is configured to press a region of the film in the direction toward the carrier.

Device and method for processing a multiplicity of semiconductor chips

A radiation-emitting component includes a semiconductor layer sequence including first and second semiconductor layers, and an active region and is arranged between the first and second semiconductor layers, first and second electrodes electrically connect to the first and second semiconductor layers, a semiconductor layer sequence generates electromagnetic radiation depending on a current flow between the first and second electrodes, a driver field-effect transistor includes at least one driver gate and at least one driver channel, the second electrode and the driver channel electrode separately electrically connect to the driver channel and the driver gate electrode electrically connects to the driver gate, and the driver field-effect transistor is configured to control a current flow between the driver channel electrode and the second electrode through the driver channel and thereby the current flow between the first and second electrodes, depending on a voltage applied to the driver gate electrode.

Radiation-emitting component

The invention relates to a method for structuring a nitride layer (), comprising the following steps: A) providing a nitride layer () formed with silicon nitride of a first type, B) defining regions () of said nitride layer () to be transformed, and C) inserting the nitride layer () into a transformation chamber for the duration of a transformation period, said transformation period being selected such that&#x2014;at least 80% of the nitride layer () regions () to be transformed are transformed into oxide regions () formed with silicon oxide, and&#x2014;remaining nitride layer () regions () remain at least 80% untransformed.

Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers, and an environment sensor

A method and a device for measuring a plurality of semiconductor chips in a wafer array are disclosed. In an embodiment a method for measuring the semiconductor chips in a wafer array, wherein the wafer array is arranged on an electrically conductive carrier so that in each case back contacts of the semiconductor chips are contacted by the carrier, wherein a contact structure is arranged on a side of the wafer array facing away from the carrier, and wherein the contact structure includes a contact element and/or a plurality of radiation-emitting measurement semiconductor chips, includes applying a voltage between the contact structure and the carrier and measuring the semiconductor chips depending on a luminous image which is generated by emitted radiation which is caused simultaneously by fluorescence when the semiconductor chips are illuminated or by a radiation-emitting operation of the measurement semiconductor chips when the voltage is applied.

Method and device for measurement of a plurality of semiconductor chips in a wafer array

An optoelectronic semiconductor chip is disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor body comprising a first semiconductor structure, a second semiconductor structure and an active region between the first and the second semiconductor structure and a plurality of recesses, each penetrating at least one of the semiconductor structures and the active region, wherein a cover surface of the active region is a continuous surface, and wherein at least in some of the recesses, surfaces of the recesses are completely covered with an electrically insulating material.

Optoelectronic semiconductor chip

A light-emitting diode chip and a method for manufacturing a light-emitting diode chip are disclosed. In an embodiment a light-emitting diode chip includes an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation and a passivation layer comprising statically fixed electrical charge carriers, wherein the passivation layer is located on a side surface of the semiconductor layer sequence covering at least the active zone.

Light-emitting diode chip, and method for manufacturing a light-emitting diode chip

A method and a device for inspecting an optoelectronic component are disclosed. In an embodiment, the method includes exciting at least one electromagnetic resonant circuit, formed by the at least one optoelectronic component and the connection board, such that the at least one optoelectronic component emits electromagnetic radiation, wherein exciting the electromagnetic resonant circuit comprises applying an electrical alternating voltage in the electromagnetic resonant circuit by generating a temporally variable electromagnetic alternating field by a first coil and a second coil, wherein the first coil and the second coil are movable with respect to the connection board.

Method and device for inspecting an optoelectronic component arranged on a connection board

A method can be used for measuring at least one optoelectronic component arranged on a connection carrier. The method includes exciting an electromagnetic oscillating circuit, which is formed by the optoelectronic component and the connection carrier, thus exciting the optoelectronic component in such a way that the optoelectronic component emits electromagnetic radiation, and measuring at least one electro-optical property of the optoelectronic component.

Method and device for measuring and optimizing an optoelectronic component

An optoelectronic semiconductor chip includes a semiconductor layer sequence. The semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and an active zone having a p-n junction, which active zone is formed between the first semiconductor region and the second semiconductor region. The semiconductor layer sequence is arranged on a carrier. The semiconductor chip also includes a first contact, which is provided for electrically connecting the first semiconductor region, and a second contact, which is different from the first contact and which is provided for electrically connecting the second semiconductor region. In addition, the semiconductor chip includes a first capacitive electrical element, which is connected in parallel with the p-n junction and which has a first dielectric element.

Optoelectronic semiconductor chip and optoelectronic component

A process for structuring at least one layer as well as an electrical component with structures from the layer are described. The invention states a process to generate at least one structured layer (A), wherein a mask structure () with a first (A) and second structure (B) is generated on a layer () which is present on a substrate (). Through this mask structure (), the first layer (A) is transferred onto the layer () using isotropic structuring processes, and the second structure (B) is transferred onto the layer () using anisotropic structuring processes. The process as per the invention permits the generation of two structures (A,B) in at least a single layer while using a single mask structure.

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Tegernheim, Germany

Roland Zeisel