Applied Materials, Inc.

Roland Trassl

Subramanya P Herle

Connie P Wang

Jian Zhu

Jürgen Henrich

Thomas Deppisch

Gerd Hoffmann

Christoph Daube

Sven Schramm

Gerhard Rist

Wolf-Eckart Fritsche

Jian Liu

Stephan Wieder

James Cushing

Wen Si

Yin Let Sim

Torsten Dieter

Torsten Bruno Dieter

A method of manufacturing an anode structure () for a lithium battery is described. The method includes a first deposition of lithium on a first flexible support () to provide a lithium anode-first sublayer (-) with a first lithium surface (); a second deposition of lithium on a second flexible support () to provide a lithium anode-second sublayer (-) with a second lithium surface (); and combining the lithium anode-first sublayer (-) and the lithium anode-second sublayer (-) by pressing the first lithium surface and the second lithium surface together to form a lithium metal anode layer (). Further described are a lithium battery layer stack with an anode structure manufactured according to the described method, and a vacuum deposition system for manufacturing an anode structure as described herein.

Method of manufacturing an anode structure, vacuum deposition system, anode structure, and lithium battery layer stack

Separators, high performance electrochemical devices, such as, batteries and capacitors, including the aforementioned separators, systems and methods for fabricating the same. In one implementation, a separator is provided. The separator comprises a polymer substrate (), capable of conducting ions, having a first surface and a second surface opposing the first surface. The separator further comprises a first ceramic-containing layer (), capable of conducting ions, formed on the first surface. The first ceramic-containing layer () has a thickness in arrange from about 1,000 nanometers to about 5000 nanometers. The separator further comprises a second ceramic-containing layer (), capable of conducting ions, formed on the second surface. The second ceramic-containing layer () is a binder-free ceramic-containing layer and has a thickness in arrange from about 1 nanometer to about 1,000 nanometers.

Ultra-thin ceramic coating on separator for batteries

An evaporation apparatus () for depositing material on a flexible substrate () supported by a processing drum () is provided. The evaporation apparatus includes: a first set () of evaporation crucibles aligned in a first line () along a first direction for generating a cloud () of evaporated material to be deposited on the flexible substrate (); and a gas supply pipe () extending in the first direction and being arranged between an evaporation crucible of the first set () of evaporation crucibles and the processing drum (), wherein the gas supply pipe () includes a plurality of outlets () for providing a gas supply directed into the cloud of evaporated material, and wherein a position of the plurality of outlets is adjustable for changing a position of the gas supply directed into the cloud of evaporated material.

Evaporation apparatus for depositing material on a flexible substrate and method therefore

An evaporation apparatus for depositing material on a substrate by a drum is described. The evaporation apparatus includes a first set of evaporation crucibles aligned in a first line a first direction for depositing evaporated material on the substrate; a first gas supply pipe extending in the first direction being arranged between at least one of the evaporation crucibles of the first set of evaporation crucibles and the drum; and a second gas supply pipe extending in the first direction for providing a gas between the first set of evaporation crucibles and the drum with openings shaped and positioned to improve the uniformity of the deposition of the material.

Evaporation apparatus with gas supply

A sputter target for sputtering a silicon-containing film is provided. The target includes a silicon-containing sputter material layer, and a carrier for carrying the sputter material layer, wherein the sputter material layer contains less than 200 ppm iron.

Sprayed Si- or Si:Al-target with low iron content

The present invention relates to a method for manufacturing a backside contact of a semiconductor component, in particular, of a solar cell, comprising a metallic layer on the backside of a substrate in a vacuum treatment chamber, and the use of a vacuum treatment system for performing said method. Through this method and its use, in particular silicon based solar cells, can be provided with a back contact in a simple manner in a continuous process sequence, wherein the process sequence can be provided particularly efficient and economical, since no handling systems for rotating the substrate are required, and in particular silk screening steps can be dispensed with.

Method for producing a metal backside contact of a semiconductor component, in particular, a solar cell

Growing community of inventors

Giessen, Germany

Roland Trassl