Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Osram Gmbh

Roland Schulz

Frank Singer

Thomas Schwarz

Jörg Erich Sorg

Florian Peskoller

Alfred Lell

Herbert Brunner

Ulrich Steegmüller

Harald König

Karsten Auen

Roland Hüttinger

Hubert Halbritter

Matthias Sabathil

Andreas Ploessl

Ales Markytan

Roland Enzmann

Christian Gaertner

Bernd Boehm

Juergen Dachs

Heiko Unold

Stefan Illek

Tony Albrecht

Alexander Linkov

Alan Lenef

Jan Marfeld

Yi Zheng

Alexander Wilm

Thomas Schlereth

Erik Heinemann

Albert Schneider

Wolfgang Mönch

Georg Rossbach

Michael Kühnelt

Markus Kirsch

Michael Bestele

Markus Arzberger

Christian Gärtner

Horst Varga

Christopher A Tarry

Felix Michel

Jürgen Dachs

Manfred Scheubeck

Janick Ihringer

Stefan Handl

Michael Kuehnelt

Ulrich Steegmueller

In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Semiconductor laser and method of production for optoelectronic semiconductor parts

An optoelectronic component includes an optoelectronic semiconductor chip configured to emit electromagnetic radiation; an optically effective element arranged such that electromagnetic radiation emitted by the optoelectronic semiconductor chip passes through the optically effective element; and a housing, wherein the optoelectronic semiconductor chip is arranged in a cavity of the housing, the optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure.

Optically effective element, method of producing an optically effective element, and optoelectronic component

In one embodiment the semiconductor laser () comprises a carrier () and an edge-emitting laser diode () which is mounted on the carrier () and which comprises an active zone () for generating a laser radiation (L) and a facet () with a radiation exit region (). The semiconductor laser () further comprises a protective cover (), preferably a lens for collimation of the laser radiation (L). The protective cover () is fastened to the facet () and to a side surface () of the carrier () by means of an adhesive (). A mean distance between a light entrance side () of the protective cover () and the facet () is at most 60 &#x3bc;m. The semiconductor laser () is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

An optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure. A method of producing an optically effective element includes providing a carrier, forming a first optically effective structure on a top side of the carrier, and arranging a cover above the top side of the carrier and the first optically effective structure.

A converter for an optoelectronic component, an optoelectronic component, a method for forming a converter for an optoelectronic component and a material for a reflector of an optoelectronic component are disclosed. In an embodiment, a converter includes a conversion element for converting a wavelength of electromagnetic radiation which passes through at least a part of the conversion element and a reflector, wherein the reflector includes a reflector material which includes MgFand/or an inorganic material as a matrix material in which a plurality of particles is embedded, wherein a refractive index of the matrix material amounts to at least 1 and at most 2, and wherein a refractive index of the particles amounts to at least 1.5.

Converter for an optoelectronic component, optoelectronic component, method for forming a converter for an optoelectronic component and material for a reflector of an optoelectronic component

An optical element is provided for beam shaping for radiation emitted by a radiation-emitting semiconductor chip. The optical element includes a radiation entrance face and a boundary surface different from the radiation entrance face with a first region and a second region. The first and second regions are arranged and embodied such that a first radiation portion of radiation entering the optical element through the radiation entrance face is reflected in the first region and after reflection in the first region is deflected in the second region towards a plane defined by the radiation entrance face.

Optical element and lighting device comprising an optical element

A ring light module having a plurality of optoelectronic semiconductor components for producing electromagnetic radiation, a reflector of the ring light module comprising a reflective surface, and a support. The semiconductor components are mounted on the support. In a plan view of a main radiation side of the ring light module, the reflector comprises at most two planes of symmetry. The reflector tapers in the direction towards the main radiation side. At least some of the main emission directions of adjacent optoelectronic semiconductor components are oriented differently from each other, and the main emission directions point towards the reflective surface.

Ring light module

A method of arranging a multiplicity of LEDs in packaging units includes defining a desired range for at least one photometric measurement variable for each of the packaging units; selecting an LED from the multiplicity of LEDs not yet arranged in one of the packaging units; measuring the at least one photometric measurement variable for the selected LED; equipping one of the packaging units containing fewer than N&#x2212;1 LEDs with the selected LED; storing a measured value and a position of the selected LED in the packaging unit in a memory; repeating until the packaging units are equipped with N&#x2212;1 LEDs; repeating and calculating the average value of the photometric measurement variable, equipping a packaging unit for which the calculated average value of the variable lies in a defined range with the selected LED; and storing the measured value and the position of the selected LED.

Method of arranging a multiplicity of LEDs in packaging units, and packaging unit including a multiplicity of LEDs

An optoelectronic component comprises: at least one semiconductor chip suitable for generating electromagnetic radiation, a beam shaping element (), through which at least part of the electromagnetic radiation emitted by the semiconductor chip during operation passes and which has an optical axis (), and which has an outer contour () with respect to a coordinate system () perpendicular to the optical axis (), wherein the contour () constitutes a curve (n) that is mirror-symmetrical with respect to both central axes (a, a) of an ellipse (e) inscribed by the contour, wherein the following succeed one another in each of the four identical sections between the respective central axes (a, a): an ellipse segment (b), a linear part (c) a second ellipse segment (d), a further linear part (c) and a third ellipse segment (b).

Optoelectronic component

A compact housing comprises a one-piece mounting plate made from a metallic material, which is designed to be joined thermally conductively by a main side to an external support not belonging to the compact housing. Furthermore, the compact housing comprises a one-piece housing cover, which is joined permanently to the mounting plate and therewith encloses a volume. In addition, the compact housing contains at least one electrical feedthrough, such that at least one electrically conductive connection may be produced therewith from inside the volume to outside the volume, this connection being insulated electrically from the mounting plate. Within the volume a module is located which is designed to emit electromagnetic radiation. This module is applied directly to the mounting plate, such that the joint face between mounting plate and module is substantially parallel to the main side of the mounting plate joined to the external support.

Compact housing

A semiconductor laser module is disclosed, comprising a module carrier () having a mounting area (), a pump device () arranged on the mounting area (), a surface emitting semiconductor laser () arranged on the mounting area (), and a frequency conversion device () arranged on the mounting area (), wherein the mounting area () of the module carrier () has an area content of at most 100 mm.

Semiconductor laser module

The invention relates to a semiconductor laser device comprising a laser bar (), a flexible conductor support (), a supporting body () of a metal or a metal alloy and a heat sink (), which is arranged between the supporting body () and the laser bar (), the laser bar () being electrically contacted by the flexible conductor support () and the supporting body () having a thickness of at least 2 mm. The invention further relates to a method for producing the above-described semiconductor laser device, wherein a synchronous soldering process is used to solder the laser bar () to the heat sink () by means of a hard solder layer () and the heat sink () to the supporting body () by means of a further hard solder layer ().

Semiconductor laser device

A method for fabricating an optically pumped semiconductor apparatus, having the following steps: provision of a connection carrier assembly () comprising a plurality of connection carriers () which are permanently connected to one another mechanically, arrangement of a surface-emitting semiconductor body () on a connection carrier () in the connection carrier assembly (), and separation of the connection carrier assembly () into individual semiconductor apparatuses.

Method for fabricating an optically pumped semiconductor apparatus

A method for producing a multiplicity of semiconductor lasers () comprising the steps of providing a carrier wafer (), producing an assembly () by applying a multiplicity of semiconductor laser chips () to a top side () of the carrier wafer (), and singulating the assembly () to form a multiplicity of semiconductor lasers (). Each semiconductor laser () comprises a mounting block () and at least one semiconductor laser chip (). Each mounting block () has a mounting area () which runs substantially perpendicular to a top side () of the mounting block (), on which top side the semiconductor laser chip () is arranged. The mounting area () is produced during the singulation of the assembly.

Method for producing a semiconductor laser, and semiconductor laser

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Wuppertal, Germany

Roland Schulz