Other

E.t.c. S.r.l.

Evonik Degussa Gmbh

Forschungszentrum Karlsruhe Gmbh

Dritte Patentportfolio Beteiligungsgesellschaft Mbh &co. Kg

University Duisburg-essen

Muccini, Michele

Roland Schmechel

Heinz Von Seggern

Paul Heremans

Michele Muccini

Raymond Ziessel

Aline Hepp

Holger Heil

Johan Lieven Hendrik Reynaert

Michael Roth

Heiko Thiem

Frank-Martin Petrat

Marcus Ahles

Marc Hoffmann

Daniel Erni

Thomas Kaiser

Niels Benson

Sven Hill

Koshi Okamura

Johan Lieven Hendrik Yeynaert

Matthias Rehahn

The invention concerns a method for production of components comprising a Schottky diode by means of printing technology. The method involves a step of application and deposition of a semiconductor-nanoparticle dispersion on a first electrode, which is disposed on a substrate, the step of exposure to laser light of the deposited semiconductor-nanoparticle dispersion to form a mu-cone with a bottom and a tip, wherein the bottom of the mu-cone is joined to the first electrode, the step of embedding the thus-formed mu-cone in an electrically insulating polymer matrix, and the step of applying a second electrode, so that the tip of the mu-cone is joined to the second electrode.

Method for production of components comprising a schottky diode by means of printing technology

An electroluminescence generating device comprising e. a channel of organic semiconductor material, said channel being able to carry both types of charge carriers, said charge carriers being electrons and holes; f. an electron electrode, said electron electrode being in contact with said channel and positioned on top of a first side of said channel layer or within said channel layer, said electron electrode being able to inject electrons in said channel layer; g. a hole electrode, said hole electrode being spaced apart from said electron electrode, said hole electrode being in contact with said channel and positioned on top of said first side of said channel layer or within said channel layer, said hole electrode being able to inject holes into said channel; h. a control electrode positioned on said first side or on a second side of said channel; whereby light emission of said electroluminescence generating device can be acquired by applying an electrical potential difference between said electron electrode and said hole electrode.

Organic electroluminescence generating devices

An electroluminescence generating device comprising a channel of organic semiconductor material, said channel being able to carry both types of charge carriers, said charge carriers being electrons and holes; an electron electrode, said electron electrode being in contact with said channel and positioned on top of a first side of said channel layer or within said channel layer, said electron electrode being able to inject electrons in said channel layer; a hole electrode, said hole electrode being spaced apart from said electron electrode, said hole channel and positioned on top of within said channel layer, said hole electrode being able to inject holes into said channel; a control electrode positioned on said first side or on a second side of said channel; whereby light emission of said electroluminescence generating device can be acquired by applying an electrical potential difference between said electron electrode and said hole electrode.

Composite of layers which comprises a dielectric layer and a layer which comprises pyrogenic zinc oxide and is bonded to the dielectric layer. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to the dielectric layer in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm, and the zinc oxide layer is dried and then treated at temperatures of less than 200&#xb0; C. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to a substrate layer or a composite of substrate layers in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm to form a zinc oxide layer, and then the zinc oxide layer and the substrate layer are treated at temperatures of less than 200&#xb0; C., and then a dielectric layer is applied to the zinc oxide layer. Field-effect transistor which has the composite of layers.

Pyrogenic zinc oxide-comprising composite of layers and field-effect transistor comprising this composite

Described are oligotetracenes of formula I which may either be unsubstituted or carry one or more substituents R and R' which are selected from the group comprising Also described is a method for preparing the referenced oligotetracenes, and use thereof as semiconductors in organic field-effect transistors (OFET's), organic light-emitting diodes (OLED's), sensors, and organic solar cells.

Oligo-tetracenes, production and use thereof

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Darmstadt, Germany

Roland Schmechel