Qualcomm Incorporated

Rf360 Singapore Pte. Ltd.

Roland Rosezin

Maximilian Schiek

Edgar Schmidhammer

Alexandre Augusto Shirakawa

Christian Huck

Willi Aigner

Xavier Perois

Thomas Mittermaier

A BAW resonator (BAWR) with improved power durability and improved heat resistance is provided. The resonator comprises a layer stack with a piezoelectric material (PM) between a bottom electrode (ELI) and a top electrode (EL) and a shunt path parallel (PCPP) to the layer stack provided to enable an RF signal to bypass the layer stack, e.g. to ground (GND). The shunt path (PCPP) has a temperature dependent conductance with a negative temperature coefficient, NTC, of resistance. When the temperature of the device rises due to high power operation, currents that would otherwise permanently damage the device are shunted to ground or another dedicated terminal by the temperature dependent shunt path. Upon cooling down normal operation is resumed.

BAW resonator with improved power durability and heat resistance and RF filter comprising a BAW resonator

The invention combines two filter technologies on a single device using the same substrate there for. On this substrate a filter circuit is arranged that has a ladder-type or a lattice arrangement of series and parallel impedance elements to provide a hybrid filter having for example a band pass function. The impedance elements are chosen from BAW resonators and LC elements.

Hybrid filter

Growing community of inventors

Bernau a. Chiemsee, Germany

Roland Rosezin