Horst Siedle Gmbh & Co. Kg

Leibniz-institut Fuer Photonische Technologien E.v.

Infineon Technologies Ag

Institut Fuer Physikalische Hochtechnologie E.v.

Institut Fuer Photonische Technologien E.v.

European Advanced Superconductor Gmbh & Co. Kg

Hl Planartechnik Gmbh

Bundesanstalt Fuer Materialforschung Und-pruefung (bam)

Institut Fuer Physikalische Hochtechnologle E.v.

Bruker Eas Gmbh

Leibniz-institut Fur Photonische Technologien E.v.

Bundesanstalt Fur Materialforschung Und -prufung (bam)

Institut Für Photonische Technologien E.v.

Roland Mattheis

Marco Diegel

Peter Dingler

Ernst Halder

Arno Ehresmann

Hugo Van Den Berg

Burkard Hillebrands

Manfred Scherzinger

Marc Kreutzbruck

Gunnar Eidmann

Kai Allweins

Klaus Steenbeck

Wolfgang-Dietrich Engel

Juergen Fassbender

Tim Mewes

Wulf Andra

Marc Von Kreutzbruck

A magnetic revolution counter, and method for determining a predefinable number n of revolutions to be determined of a rotating magnetic field, generated by a magnetic system includes a revolution sensor, which includes magnetic domain wall conductors composed of open spirals or closed, multiply-wound loops, which are formed by a GMR layer stack or a soft magnetic layer comprising locally present TMR layer stacks and in which magnetic 180&#xb0; domain walls can be introduced and located by measuring the electrical resistance of predefinable spiral or loop sections, wherein a single domain wall is, or at least two magnetic domain walls are, introduced into the domain wall conductors such that the at least two domain walls are brought into a defined separation of greater than 360&#xb0; with respect to one another, based on the change in location thereof from a first to a second position, with a rotation of the outer magnetic field by the angle of greater than 360&#xb0;, and are permanently thus spaced apart from one another, and electrical contacts, which are disposed in a defined manner on the domain wall conductors, are provided.

Magnetic revolution counter and method for determining numbers of revolutions that can be determined by means of said revolution counter

A magnetic revolution counter for the self-identification of error states includes magnetic domain wall conductors which are composed of open spirals or closed, multiply-wound loops, formed by a GMR layer stack or a sort magnetic layer of locally present TMR layer stacks and in which the magnetic 180&#xb0; domain walls can be introduced and located, wherein a predefinable bijective magnetization pattern of domain walls and/or domain wall gaps is written in, and the associated signal levels thereof are stored in the form of signal level sequences in a first memory in tabular form, which is compared to tabular target value patterns of the signal level sequences stored in a second memory for each permissible revolution i (0&#x2264;i&#x2264;n), and a third memory is provided, in which tabular error target value patterns of deviations of signal level sequences, caused thereby, from regular signal level sequences stored in the second memory are stored.

Magnetic revolution counter for self-detecting error states when determining numbers of revolutions which can be determined by said revolution counter

A magnetic sensor for the absolute counting of revolutions or linear distances includes a soft magnetic loop structure, which is populated with a predeterminable number of magnetic domains and provided with GMR or TMR layer assemblies, in which at least two separate coplanar loops having predominantly straight subsegments extending in a rhombus-like arrangement with respect to each other are provided, and the at least two loops are connected to each other via a shared intersecting point, wherein directly in front of each intersecting region in which, and after which, the domains can change from one loop to the neighboring loop, these sections of the loop structure are bent away from the conductor guidance and are curved in a siphon-like manner in this region so as to be directed into the interior of the loop structure, wherein the conductors in respective siphon-like troughs intersect each other perpendicularly.

Magnetic sensor for absolute counting of revolutions or linear distances

An arrangement for testing an elongated bodyor a welded and bonded joint in the body for faultshas a devicefor production of an eddy current in the elongated bodyor its welded and bonded joint. At least one magnetic field sensorfor sensing the magnetic field is provided on the elongated bodyor the welded and bonded joint. The dimensions of the at least one magnetic field sensorare equal to or less than the faultto be investigated.

System and method for the non-destructive testing of elongate bodies and their weldbond joints

A magnetic revolution counter for the unambiguous determination of a definable number of revolutions of a rotating element to be determined. The aim of creating such a revolution counter allowing a determination of any arbitrarily definable number of revolutions, for example up to values of N&#x3e;4000 or more as defined, and enabling a cost-effective and small design, is achieved in that a plurality of sensor elements (to) are provided, which are formed by closed loops having magnetic domains attached and guiding the same, containing at least one ferromagnetic, respectively soft magnetic, layer. The loops have tapered protuberances directed toward the loop interior, wherein the number of protuberances provided per loop is determined in a defined manner deviating from loop to loop, and electric contact arrangements are provided, which allow the detection of any changes in the electric resistance of predetermined loop sections after a completed change of location of magnetic domains due to the effect of the outer rotating magnetic field in predetermined loop sections, and wherein the said resistance values can be supplied to an analysis unit for the purpose of allocating the number of revolutions of the rotating element.

Magnetic revolution counter

A sensor element for a revolution counter includes a laminated structure suitable to cause a change in magnetisation in the sensor element without a power supply, simply by the displacement of a magnetic field past the sensor element. Moreover, the laminated structure is suitable for storing a plurality of such changes. The sensor element has a spiral structure.

Sensor element with laminated and spiral structure and without a power supply for a revolution counter

A digital magnetic memory cell device for read and/or write operations, having a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system, which is designed as an AAF system and includes at least one reference layer, wherein the reference layer system has a layer section comprising at least one bias layer system with at least one ferrimagnetic layer, the magnetic moments of the bias layer system and of the reference layer being coupled in opposite directions via a coupling layer.

Digital memory cell device

The invention concerns a sensor element () designed in particular for a revolution counter (). It is possible to pass a magnetic field in front of said sensor element (). The latter () has a laminated structure () and a shape () such that power supply is not needed to cause a modification of magnetization in the sensor element () when the magnetic field passes in front thereof, and in that several such modifications can be stored.

Sensor element for revolution counter

The invention relates to a Wheatstone bridge containing bridge elements that are connected in a conventional manner and consisting of a spin-valve system, in addition to a method for producing the same. The aim of the invention is to produce a Wheatstone bridge, in which respective half-bridges lying adjacent to one another have a respective non-parallel bias magnetisation direction. To achieve this, the respective bridge elements that are not adjacent (or) are provided with a doping of implantable ions in quantities of between 1.10and 5.10atoms/cm2 beneath the pinned ferromagnetic layer of a GMR- or TMR-spin-valve layer system. During the bombardment of selected bridge areas () or surface areas, which are not provided with a covering (), with a low dose of low-energy ions, whose strengths are sufficiently great to enable the is ions to penetrate the pinned ferromagnetic layer, all surface areas or bridge elements () are exposed to a homogeneous, targeted magnetic field of sufficient strength.

Wheatstone bridge containing bridge elements, consisting of a spin-valve system and a method for producing the same

Magnetoresistive angular position sensor and rotation speed sensor

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Jena, Germany

Roland Mattheis