Centre National De La Recherche Scientifique

Sandia Corporation

California Institute of Technology

Institut National Polytechnique De Grenoble

Institut Max Von Laue

Etat Francais Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Roland Madar

James G Fleming

Michel Pons

Claude Jaussaud

Claude Bernard

Paul M Smith

Marc-A Nicolet

Elizabeth Lynn Roherty-Osmun

Jonathan S Custer

Ronald V Jones

Alain Rouault

Daniel Fruchart

Joaquim Torres

Francis Baillet

Robert Fruchart

Jean-Pierre Senateur

Francois Weiss

Olivier Thomas

Adulfas Abrutis

Patrick Chaudouet

Daniel Boursier

Pierre Taunier

Philippe L'Heritier

Jean-Francois Million-Brodaz

Eric Mastromatteo

Andreas Magerl

Alain Escoffier

Elisabeth Blanquet

Anne-Marie Dutron

Daniel Turover

Didier Chaussende

Etienne Pernot

Ludovic Charpentier

The invention concerns a device () for forming in single-crystal state a compound body with incongruent evaporation, capable of being in monocrystalline or polycrystalline form, comprising at least one first chamber () containing a substrate () whereat is formed a polycrystalline source of said body and a monocrystalline germ () of said body; a second chamber (), said substrate being arranged between the two chambers; means for input () of gaseous precursors of said body into the second chamber capable of bringing about deposition of said body in polycrystalline form on the substrate; and heating means () for maintaining the substrate at a temperature higher than the temperature of the germ so as to bring about sublimation of the polycrystalline source and the deposition on the germ of said body in monocrystalline form.

Formation of single-crystal silicon carbide

A method for forming a Ti,Al,N coating on a part without plasma enhancement, wherein a chemical vapor deposition chamber is heated to 250-500&deg; C.; the part to be coated is heated to 550-650&deg; C. and placed in said chamber; and a mixture of titanium and aluminium chlorides, NH,and H,is injected into the chamber. The molar amount of NH,is greater than the molar amount of chlorides, and the molar amount of hydrogen is over five times greater than the molar amount of chlorides.

Non-plasma CVD method and apparatus of forming Ti1-xA1xN coatings

The present invention relates to the forming of amorphous or near-amorphous, ternary films of W-Si-N on substrates by chemical vapor deposition of WF.sub.6, SiH.sub.4 and NH.sub.3 and a carrier gas. The present invention method will allow the conformal forming of amorphous or near-amorphous, ternary films of W-Si-N on patterned non-planar substrates at temperatures at or below about 450.degree. C., by chemical vapor deposition of WF.sub.6, SiH.sub.4 and NH.sub.3 and a carrier gas. A typical temperature range for the formation of the films is between 473.degree. K. and 773.degree. K., while the reactor pressure can be varied between 0.1 to 50 Torr. The composition of the deposited films is adjusted by varying the flow ratios of the reactive gases.

Synthesis of W-Si-N films by chemical vapor deposition using WF.sub.6,

Method and device for introducing precursors into chamber for chemical

A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.

Chemical vapor deposition of W-Si-N and W-B-N

A method for manufacturing a crystal comprising at least two elements wherein the proportion of at least one of the elements varies in the direction of the thickness. A CVD process is used. The proportion of the gas components from which is formed the deposition is varied with time. The invention applies to the manufacturing of Si.sub.x Ge.sub.1-x crystals.

Method for manufacturing a crystal with a lattice parameter gradient

A selective deposition process of a refractory metal silicide onto the silicon apparent surfaces of a wafer partially coated with SiO.sub.2, comprising the following steps: flowing in a cold-wall airtight chamber comprising said wafer a gaseous silane composite at a partial pressure P.sub.Si.sbsb.x.sub.H.sbsb.y and an halogenide of said metal at a partial pressure P.sub.Me ; heating the wafer to a first temperature (T1) for a first duration (t1), P.sub.Si.sbsb.x.sub.H.sbsb.y and P.sub.Me being chosen so as to allow a metal silicide deposition to be formed on the wafer, the silicon being overstoichiometric; and, heating the wafer to a second temperature (T2) lower than the first one for a second duration (t2), T2 being chosen as a function of P.sub.Si.sbsb.x.sub.H.sbsb.y and P.sub.Me so as to allow a stoichiometric metal silicide deposition to be formed on the wafer.

Selective deposition process of a refractory metal silicide onto silicon

New magnetic hydride Nd.sub.2 Fe.sub.14 BH.sub.x (0&lt;x&lt;5) and family corresponding to other rare earths and yttrium. Possible substitution of Fe by Co. Preparation from Nd.sub.2 Fe.sub.14 B by hydrogenation (ambient temperature; pH.sub.2 &gt;20 bar), which can be reversed to give powdered Nd.sub.2 Fe.sub.14 B. Remarkable magnetic properties.

Magnetic rare earth/iron/boron and rare earth/cobalt/boron hydrides, the

Growing community of inventors

Eybens, France

Roland Madar