University of California

California Institute of Technology

Roland K Kawakami

Michael Roukes

Hongxing Tang

Kang-Lung Wang

David D Awschalom

Wei Han

Yi Zhou

The embodiments disclosed herein relate to growth of magnesium-oxide on a single crystalline substrate of germanium. The embodiments further describes a method of manufacturing and crystalline structure of a FM/MgO/Ge(001) heterostructure. The embodiments further related to method of manufacturing and a crystalline structure for a high-k dielectric//MgO [100](001)//Ge[110](001) heterostructure.

Epitaxial growth of single crystalline MgO on germanium

Ferromagnetic semiconductor-based compositions, systems and methods that enable studies of the dynamics and magnetoresistance of individual magnetic domain walls, and which provide enhanced magnetic switching effects relative to metallic ferromagnets. Aspects of the present invention are enabled by recent studies of the Giant Planar Hall effect (GPHE), and in particular GPHE in (Ga,Mn)As&#x2014;based devices. The GPHE generally originates from macro- and micromagnetic phenomena involving single domain reversals. The GPHE-induced resistance change in multiterminal, micron-scale structures patterned from (Ga,Mn)As can be as large as about 100&#x3a9;, four orders of magnitude greater than analogous effects previously observed in metallic ferromagnets. Accordingly, recent data provide sufficient resolution to enable real-time observations of the nucleation and field-induced propagation of individual magnetic domain walls within such monocrystalline devices. The magnitude of the GPHE is generally size-independent down to the submicron scale indicating that for applications involving nanostructures it is capable of sensitivity comparable to SQUID-based techniques.

Giant planar hall effect in epitaxial ferromagnetic semiconductor devices

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Riverside, CA, United States of America

Roland K Kawakami