Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Osram Gesellschaft MIT Beschraenkter Haftung

Osram Gmbh

Osram Gesellschaft MIT Beschrankter Haftung

Tubesolar Ag

Osram Ag

Roland Hüttinger

Frank Singer

Alfred Lell

Herbert Brunner

Jörg Erich Sorg

Harald König

Florian Peskoller

Stefan Jüngst

Matthias Sabathil

Britta Göötz

Angela Eberhardt

Roland Schulz

Karsten Auen

Steffen Walter

Khanh Pham Gia

Klaus Stockwald

Stefan Kotter

Paul Braun

Reinhold Schmidt

Joachim Wirth-Schön

Jens Clark

Johann Mayer

Joerg Leckert

Vesselinka Petrova-Koch

Reiner Mackh

Annette Goss

Patrick Müller

In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Semiconductor laser and method of production for optoelectronic semiconductor parts

In one embodiment the semiconductor laser () comprises a carrier () and an edge-emitting laser diode () which is mounted on the carrier () and which comprises an active zone () for generating a laser radiation (L) and a facet () with a radiation exit region (). The semiconductor laser () further comprises a protective cover (), preferably a lens for collimation of the laser radiation (L). The protective cover () is fastened to the facet () and to a side surface () of the carrier () by means of an adhesive (). A mean distance between a light entrance side () of the protective cover () and the facet () is at most 60 &#x3bc;m. The semiconductor laser () is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

A photovoltaic module is specified, comprising: a cylindrical light-transmissive tube enclosing an interior and having a main extension direction and a curved inner surface facing the interior, and a mechanically flexible photovoltaic component comprising a solar cell arrangement applied on a carrier film, wherein the photovoltaic component is arranged in the interior, the solar cell arrangement has a curvature, wherein the curvature follows the curved course of the inner surface of the tube at least in places and the solar cell arrangement at least partly covers the inner surface, wherein the covered inner surface forms a light passage surface of the photovoltaic module.

Photovoltaic module and photovoltaic system

A conversion element includes a platelet including an inorganic glass, and first converter particles having a shell and a core, wherein the shell includes an inorganic material and the core includes a nitride or oxynitride luminescent material and the first converter particles are arranged on and/or in the platelet.

Conversion element, method of producing a conversion element, optoelectronic device comprising a conversion element

A method for producing optoelectronic semiconductor components and an optoelectronic semiconductor component are disclosed. In an embodiment the method includes: A) creating a blank by pultrusion from a glass melt, B) shaping the blank into a billet-shaped optical element with a longitudinal axis, the optical element having a mounting side and a light outlet side, C) producing conductor tracks on the mounting side, D) mounting a plurality of optoelectronic semiconductor chips on the mounting side of the optical element and connecting them to the conductor tracks and E) separating the optical element into the optoelectronic semiconductor components, wherein each optoelectronic semiconductor component comprises at least two of the semiconductor chips, and wherein at least steps A) to D) are performed in the stated sequence.

Method for producing optoelectronic semiconductor components and optoelectronic semiconductor component

The lamp uses a sealing system with a ceramic supporting element () having a short length LA together with a W&#x2014;Nb leadthrough part () and a specially adapted glass solder (), which is based on an AlOrare earth oxide system. In this case, the W part is accommodated in the supporting part over a length LW of 1 mm, and the aspect ratio LW/DUW, formed from the length LW and the diameter DUW of the W part, is at least 10.

High-pressure discharge lamp

The invention relates to a metal halide lamp comprising a ceramic discharge vessel (), characterized in that an MoV leadthrough is connected to a PCA element (AlO) by means of a specific adhesive layer containing Al and Mo.

Metal halide lamp with adhesive layer sealing molybdenum/vandium alloy leadthrough

The invention relates to a metal halide lamp comprising a ceramic discharge vessel (), characterized in that a molybdenum leadthrough () is connected to a cermet stopper () via an intermetal interface gradient ().

Metal halide lamp with intermetal interface gradient

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Kaufering, Germany

Roland Hüttinger