Continental Teves, Ag and Company Ohg

Vti Technologies Oy

Murata Electronics Oy

Roland Hilser

Bernhard Schmid

Roland Burghardt

Heikki T Kuisma

Stefan Günthner

Altti Torkkeli

Wolfgang Jöckel

Timo Dietz

Petri Klemetti

Otmar Simon

Ramnath Sivaraman

Dirk Theobald

Jörg Heimel

Veith Albrecht

A method for producing sensor information depends on a rotational speed, using a rotational speed sensor which is adapted to output rotational speed pulses in predetermined angular positions of a physical sensor field that rotates at the rotational speed. In order to increase resolution, a digital angle signal each is determined between the pulses. A defined number of most significant bits of said angle information is output to determine the rotational speed so that the interval between two pulses is subdivided into a defined number of subintervals. An angle value which can be unambiguously interpreted by means of the sinusoidal signal can be determined from the cosine signal by using two phase shift sinusoidal signals and an arccos function. The device optionally outputs the angle signal below a threshold value and an impulse signal above the threshold value to determine speed.

Resolution increase in the rotational speed signal between rotational speed pulses

A method and apparatus for the precise measuring operation of a micromechanical rotation rate sensor, including at least one deflectively suspended seismic mass, at least one drive device for driving the seismic mass, and at least one first and one second trimming electrode element, which are jointly assigned directly or indirectly to the seismic mass, a first electrical trimming voltage (U, U, U) being set between the first trimming electrode element and the seismic mass, and a second electrical trimming voltage (U, U, U) being set between the second trimming electrode element and the seismic mass, the first and the second electrical trimming voltages being set at least as a function of a quadrature parameter (U) and a resonance parameter (U).

Method for the precise measuring operation of a micromechanical rotation rate sensor

A micromechanical acceleration sensor, including at least one substrate, one or more frames, at least a first frame of which is suspended directly or indirectly on the substrate by at least one spring element, and is deflected with respect to the substrate when at least a first acceleration acts, and at least a first seismic mass which is suspended on the first frame or an additional frame by at least one spring element, and is deflected with respect to this frame when an acceleration acts which is, in particular, different from the first acceleration.

Micromechanical acceleration sensor

In order to be able to perform redundant measurements of rotation rates particularly economically, disclosed herein is a sensor device which includes a dual-axis, first rotation rate sensor element with which rotation rates of rotating motions of the sensor device about a first and a second rotation rate measurement axis can be detected, wherein the first and the second rotation rate measurement axes are oriented orthogonally in relation to one another. The sensor device is defined by the fact that the sensor device includes at least one other rotation rate sensor element with which a rotation rate of a rotating motion of the sensor device about a rotation rate measurement axis, which lies in a plane together with the first and the second rotation rate measurement axes, can be deselected.

Sensor device for detecting at least one rotation rate of a rotating motion

A method for producing an encapsulation module and/or for encapsulating a micromechanical arrangement, wherein electronic connection provisions are formed from a blank of electrically conductive semiconductor material, by one or more structuring processes and/or etching processes, wherein, in the course of forming the electronic connection provisions, a pedestal of the semiconductor material arises, on which the electronic connection provisions are arranged, wherein the latter are subsequently embedded with an embedding material and the embedding material and/or the semiconductor pedestal are removed after the embedding to an extent such that a defined number of the electronic connection provisions have electrical contacts on at least one of the outer surfaces of the encapsulation module thus produced, wherein upon forming the electronic connection provisions, on the pedestal of the semiconductor material, an insular material hump is formed, on which a plated-through hole is arranged in each case, and which embodies a semiconductor electrode.

Encapsulation module method for production and use thereof

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Kirchheim Teck, Germany

Roland Hilser