Osram Oled Gmbh

Roland Heinrich Enzmann

Hubert Halbritter

Martin Rudolf Behringer

Lorenzo Zini

Vanessa Eichinger

Andreas Plößl

Alexander Bachmann

Christian Mueller

Stefan Barthel

Christian Müller

Michael Klein

Michael Müller

Marc Christian Nenstiel

Jochen Brendt

In at least one embodiment of the method of operating a laser device () having a plurality of laser diodes () which can be controlled independently of one another, wherein controlled laser diodes are each operated with an operating current (I), and wherein each laser diode can be operated for a proper operation in a nominal current range (ΔI), a step A) is carried out in which an input current (I_) or an input voltage (U_) is applied to the laser device. Furthermore, a step B) is carried out in which a characteristic value is determined that is representative of a number N of laser diodes that can be operated in the respective nominal current range with the input current applied in step A) or with the input voltage applied in step A). If the characteristic value is representative of N≥1, M laser diodes are controlled in a step C) in such a way that the M laser diodes are each operated in the nominal current range, wherein 1≤M≤N is selected.

Method for operating independently controlled laser diodes in a device where a subset of laser diodes can be operated in their nominal current range

A radiation-emitting semiconductor device () is specified, comprising a semiconductor body () having an active region () provided for generating radiation, a carrier () on which the semiconductor body is arranged and an optical element (), wherein the optical element is attached to the semiconductor body by a direct bonding connection. Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.

Radiation-emitting semiconductor component and method for producing radiation-emitting semiconductor component

An optoelectronic device may include an optoelectronic semiconductor chip that is configured to emit electromagnetic radiation. The chip may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and a plurality of electrical contact elements. The first current spreading layer may be arranged on a side of the second semiconductor layer facing away from the first semiconductor layer. The plurality of electrical contact elements may electrically connect the first semiconductor layer to the first current spreading layer. The second current spreading layer may be electrically connected to the second semiconductor layer. The second current spreading layer may be arranged between the first current spreading layer and the second semiconductor layer where an insulating layer insulates a first electrical contact element and a second electrical contact element from the second current spreading layer.

Optoelectronic device comprising a current spreading layer

The invention relates to a semiconductor laser diode () comprising: &#x2014;a semiconductor layer sequence () having an active region () provided for generating radiation; &#x2014;a radiation decoupling surface () which extends perpendicular to a main extension plane of the active region; &#x2014;a main surface () which delimits the semiconductor layer sequence in the vertical direction; &#x2014;a contact layer () which adjoins the main surface; and &#x2014;a heat-dissipating layer (), regions of which are arranged on a side of the contact layer facing away from the active region, wherein the contact layer is exposed in places for external electrical contact of the semiconductor laser diode. The invention also relates to a semiconductor component.

Semiconductor laser diode and semiconductor component

A semiconductor chip may include a substrate and a semiconductor body positioned thereon. The semiconductor body has a first semiconductor layer and a second semiconductor layer with an active zone sandwiched therebetween. At least one current spreading layer is designed to electrically contact the first semiconductor layer positioned between the substrate and the semiconductor body. A metal layer is designed to electrically contact the second semiconductor layer positioned between the substrate and the current spreading layer where the metal layer fully covers the current spreading layer. An insulating layer may be positioned between the current spreading layer and the metal layer in the vertical direction to where the metal layer is electrically insulated from the current spreading layer.

Semiconductor chips and method for producing semiconductor chips

A radiation emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a carrier including a first main surface and a second main surface opposite to the first main surface, an n-doped layer and a p-doped layer forming a pn-junction and a vertical region starting from the first main surface and running parallel to side faces of the carrier, wherein the vertical region is n-doped, p-doped or electrically insulating, and wherein the vertical region extends within a boundary region of the carrier and completely encloses a central volume region of the carrier, an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation, the epitaxial semiconductor layer sequence being located at the first main surface of the carrier and two electrical contacts disposed on a front side of the semiconductor chip.

Radiation-emitting semiconductor chip

A semiconductor laser and a method for producing such a semiconductor laser are disclosed. In an embodiment a semiconductor laser has at least one surface-emitting semiconductor laser chip including a semiconductor layer sequence having at least one active zone configured to generate laser radiation and a light exit surface oriented perpendicular to a growth direction of the semiconductor layer sequence. The laser further includes a diffractive optical element configured to expand and distribute the laser radiation, wherein an optically active structure of the diffractive optical element is made of a material having a refractive index of at least 1.65 regarding a wavelength of maximum intensity of the laser radiation; and a connector engaging at least in places into the optically active structure and completely filling the optically active structure at least in places.

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Penang, Malaysia

Roland Heinrich Enzmann