Leybold Aktiengesellschaft

Forschungsverbund Berlin E.v.

Roland Gesche

Stefan Locher

Silvio Kuehn

Rudolf Latz

Horia-Eugen Porteanu

Karl-Heinz Kretschmer

Michael Scherer

Peter Mahler

Rainer Gegenwart

Joachim Aufreiter

Berthold Ocker

Jochen Ritter

Burkhard Altekruger

Armin Liero

Reiner Hinterschuster

Wolfgang Stang

Mark Saunders

Silvio Kühn

Helmut Rauner

Jurgen Muller

Sonja Noll

Karl Keim

Sundarajan Mutialu

Martin Flachsel

Joachim Scherer

Ibrahim M Khalil

Gunter Wurpts

Manfred Zipf

Norbert Vey

Andreea Cristina Andrei

Stephan Buchholz

A plasma light with at least one non-rotating light bulb is disclosed. The light includes a conducting cavity structure with a radiation source input port and a light bulb. The geometry of the cavity is designed to generate electrical fields with time-dependent geometrical designed orientation within parts of the light bulb, while the direction of the radiation fields from the radiation source port caused by a microwave generator to the input port fields is stationary.

Plasma light engine

A device for generating a plasma, comprises an alternating voltage source, a travelling wave resonator and coupling means that are designed to couple the alternating voltage generated by the alternating voltage source into the travelling wave resonator in such a manner that travelling electromagnetic waves are produced, wherein the travelling wave resonator is designed to increase the electric field strength of the travelling electromagnetic waves in such a manner that a plasma is ignited in a gas. The invention further relates to a method for generating a plasma, comprising the steps of: generating an alternating voltage; generating travelling electromagnetic waves in a travelling wave resonator by coupling said alternating voltage into the travelling wave resonator; and increasing the electric field strength of the travelling electromagnetic waves in the travelling wave resonator in order to ignite a plasma in a gas.

Device and method for generating a plasma by means of a traveling wave resonator

A method and apparatus generates pulses that can be used for high-precision three-dimensional plasma treatment. At least two sources are furnished with at least one time function, wherein each of the at least two sources radiates an electromagnetic field generated by one of the time functions, and the at least one time function. In a method, the at least two sources cooperate in such a manner that at least one predetermined field strength is realized sequentially in a temporal succession in at least two predetermined space-time points. An alternative method uses at least one source and at least one reflection element. An apparatus with at least two sources and at least one data processing device or at least one source, at least one reflection element and at least one data processing device is configured such that one of the methods can be executed.

Method and apparatus for generating plasma pulses

A receiver with a local oscillator, a quadrature modulator, a first mixer and a second mixer, wherein a first input of the quadrature modulator is connected to a second signal input of the receiver circuit and a second input of the quadrature modulator is connected to the local oscillator. Further, a first input of the first mixer is connected to a first signal input of the receiver circuit, a second input of the first mixer is connected to an output of the quadrature modulator, and an output of the first mixer is connected to a first signal output of the receiver circuit. A first input of the second mixer is connected to the second signal input, a second input of the second mixer is connected to the output of the quadrature modulator, and an output of the second mixer is connected to a second signal output of the receiver circuit.

Auto-heterodyne receiver

The invention relates to a plasma source with an oscillator having an active element and a resonator connected to the active element. The resonator has a hollow body, a gas inlet, a gas outlet arranged at a distal end of the hollow body about a longitudinal axis of the hollow body, and a coil arranged along the longitudinal axis of the hollow body, said coil having an effective length of one quarter of a wavelength at a resonant frequency of the resonator. A distal end of the coil is arranged relative to the gas outlet such that a plasma section can form between the distal end of the coil serving as a first plasma electrode and the gas outlet of the hollow body serving as a second plasma electrode. At a proximal end of the hollow body, the coil is lead out of the interior of the hollow body through an electrically contact-free feed-through, and a proximal end of the coil contacts the hollow body at its external side. At a first contact region located between the proximal end of the coil and the feed-through, the coil is coupled to a first gate of the active element, and at a second contact region located between the proximal end of the coil and the feed-through, the coil is coupled to a second gate of the active element.

Miniaturizable plasma source

A microplasma array for the production of low-temperature plasmas at or near atmospheric pressures is described. The walls of holes made in a substrate at regular intervals with respect to one another form hollow electrodes and are coated with metal. The hollow electrodes are supplied individually or as a group from one side of the substrate with an electrical excitation in the GHz-region.

Microplasma array

The invention relates to an electrode for a plasma generator for generating plasmas at atmospheric pressure or near-atmospheric pressures by means of excitation using microwaves. The invention provides an electrode made of a sheet metal strip (), in the longitudinal direction of which at least one slot () is introduced at a length that is one time or multiple times that of a quarter of the wavelength of the open-circuit voltage of the microwave such that at least two partial electrodes () are formed, wherein the voltage supply line is provided on the partial electrodes () in the region of the closed slot end or ends.

Electrode for a plasma generator

The present invention is directed to a self-adjusting gate bias network for field effect transistors in radio frequency applications. A bias network for field effect transistors is provided comprising a field effect transistor having a source electrode connected to ground and a drain electrode connected to a load; a radio frequency network connected to the gate electrode; a gate bias network connected to the gate electrode; wherein a device having a non-linear characteristic is provided in series between the gate electrode and the gate bias network such that a forward bias current at the gate electrode of the field effect transistor is reduced or prevented. The reduction or prevention of a forward bias current leads in overdrive conditions to a self-adjustment of the bias point of the field-effect transistor improving the reduction of distortions of an amplifier or changing the class of oscillators connected to the gate electrode.

Self-adjusting gate bias network for field effect transistors

In a coating apparatus, a sputter cathode (1) has, directly side by side, two electrodes (2, 3) connected in common to a high-frequency generator and having each a target (9, 10). The targets (9, 10) of both electrodes (2, 3) abut one another each with a straight edge (11, 12). A dark space shield surrounds both electrodes (2, 3) and targets (9, 10) together.

Dual cathode sputter coating apparatus

An evacuable chamber serving as a cathode contains a rotatable magnet system and is connected to a high frequency power supply for sputtering a target. The chamber is electrically isolated from an evacuable housing containing the substrate to be coated, the chamber being covered by a cup-like shield fixed to the housing to define an interior space. A pipe for evacuating the chamber includes first and second sections separated by a gap and connected by an electrically insulating collar in which parallel metal grids are installed in the gap and respectively connected to the power source and to ground in order to prevent the formation of secondary plasma.

Cathodic sputtering system

A vacuum coating system has a processing station (2) designed as a sputter-etching station, in which a high-frequency input electrode (25) is mounted between two substrate holders (23, 24), which carry the substrates (5, 6). Between the substrate holders (23, 24) and the high-frequency input electrode (25), a distance (a) is provided, which is smaller than the dark space distance.

Vacuum coating system

The invention relates to a microwave-enhanced sputtering configuration. In this sputtering configuration a magnetron cathode is disposed in a housing whose target opposes a substrate. At both sides of the target is provided in each instance a microwave inlet comprising a waveguide coupled with a cavity resonator. The waveguide is implemented so that the microwave extends parallel to the target surface. Around the target is looped a first magnet coil generating a first magnetic field, while around an L-shaped end of the waveguide is looped a second magnet coil.

Microwave-enhanced sputtering configuration

A crucible is situated in a vacuum chamber and provided with a feeder for granulate material, heating elements for melting the material, and a crystal puller above the crucible. Measuring elements provide signals for a controller including a fuzzy processor utilizing an empirically determined data field to output a signal for the material feeder.

Method and apparatus for pulling monocrystals from a melt

The invention relates to a device for generating a plasma by means of cathode sputtering and microwave irradiation. This device comprises a magnetron cathode over which is placed a microwave cavity resonator at the atmosphere side. At the vacuum side the device comprises laterally delimiting shielding sheets which on their inside are provided with a magnet which generates a magnetic field perpendicular to the surface of the target of the magnetron cathode.

Device for generating a plasma by means of cathode sputtering and

Apparatus for thin-coating processes for the treatment of substrates (8) of large surface area using a plasma (6) which is excited by microwaves (M) and the latter are coupled from a source by means of a waveguide (1) consisting of at least one hollow conductor (1), as well as by means of a horn antenna, into a plasma chamber (5), the waveguide (W) having a substantially rectangular aperture, an area is provided at the end of the hollow conductor (Q) with a slit-like constriction (Q), a rectangular horn (2) adjoins this area, and a compensation area (3) is provided between the largest aperture of the rectangular horn (2), as well as of the plasma chamber (5).

Growing community of inventors

Seligenstadt, Germany

Roland Gesche