University of Michigan

Roksana Tonny Rashid

Xianhe Liu

Zetian Mi

Yong-Ho Ra

An all-epitaxial, electrically injected surface-emitting green laser operates in a range of about 520-560 nanometers (nm). At 523 nm, for example, the device exhibits a threshold current density of approximately 0.4 kilo-amperes per square centimeter (kA/cm), which is over one order of magnitude lower than that of previously reported blue laser diodes.

Nanowire light emitting devices

Nanocrystal surface-emitting lasers

A nanowire can include a first semiconductor portion, a second portion including a quantum structure disposed on the first portion, and a second semiconductor portion disposed on the second portion opposite the first portion. The quantum structure can include one or more quantum core structures and a quantum core shell disposed about the one or more quantum core structures. The one or more quantum core structures can include one or more quantum disks, quantum arch-shaped forms, quantum wells, quantum dots within quantum wells or combinations thereof.

Growing community of inventors

Montreal, Canada

Roksana Tonny Rashid