Micron Technology Incorporated

Rokibul Islam

Anilkumar Chandolu

Albert Fayrushin

Christopher J Larsen

Damir Fazil

Prakash Rau Mokhna Rau

S M Istiaque Hossain

Arun Kumar Dhayalan

Joel D Peterson

George Matamis

Some embodiments include an integrated assembly having a first deck. The first deck has first memory cell levels alternating with first insulative levels. A second deck is over the first deck. The second deck has second memory cell levels alternating with second insulative levels. A cell-material-pillar passes through the first and second decks. Memory cells are along the first and second memory cell levels and include regions of the cell-material-pillar. An intermediate level is between the first and second decks. The intermediate level includes a buffer region adjacent the cell-material-pillar. The buffer region includes a composition different from the first and second insulative materials, and different from the first and second conductive regions. Some embodiments include methods of forming integrated assemblies.

Integrated assemblies, and methods of forming integrated assemblies

Growing community of inventors

Meridian, ID, United States of America

Rokibul Islam