Jozef Stefan Institute

Center Of Excellence On Nanoscience And Nanotechnology—nanocenter

Center of Excellence on Nanoscience and Nanotechnology - Nanocenter, Ljubljana

Rok Venturini

Dragan Mihailovic

Damjan Svetin

Anze Mraz

The invention describes a memory device which combines a switchable resistive element and a superconductor element electrically in parallel. The switchable resistive element comprises an active material, which is switchable between first and second values of electrical resistivity &#x3c1;and &#x3c1;at the same temperature, wherein &#x3c1;is different to &#x3c1;. The superconductor element is operable so that at least part of the superconductor element is switchable from a superconducting state to a non-superconducting state. When the superconductor element is switched from the superconducting state to the non-superconducting state, a current injection is provided through the switchable resistive element capable of switching the switchable resistive element between said first and second values of electrical resistivity.

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Ljubljana, Slovenia

Rok Venturini