Qimonda Ag

Altis Semiconductor, Snc

Rok Dittrich

Ulrich Karl Klostermann

A magnetoresistive memory cell has a magnetic stack providing an effective anisotropy field of a storage layer of the magnetic stack during thermal select heating, at least one line providing at least one external magnetic field to the magnetic stack, the effective anisotropy field and the at least one external magnetic field having a non-zero angle relative to one another.

Magnetoresistive memory cell

According to one embodiment of the present invention, and integrated circuit having a cell arrangement is provided. The cell arrangement includes: at least one reference memory cell set to a reference memory cell state; and a bias supplier to supply a bias condition to the reference memory cell when accessing the memory cell, such that the bias condition increases the stability of the set reference memory cell state.

Integrated circuit, cell arrangement, method of manufacturing an integrated circuit, method of operating an integrated circuit, and memory module

An integrated circuit having a cell arrangement is provided. The cell arrangement may include a memory cell and a reference cell. The memory cell has a first memory cell status and a second memory cell status. The reference cell is set to an intermediate memory cell status between the first memory cell status and the second memory cell status.

Integrated circuit, cell arrangement, method for manufacturing an integrated circuit and for reading a memory cell status, memory module

An integrated circuit having a cell arrangement is provided. The cell arrangement includes at least one magnetoresistive memory cell, a first line providing a first line current, and a second line providing a second line current. The cell arrangement further includes a controller controlling the application of the first line current and the second line current, such that while the first line current is active, a transition of a magnetic field provided by a change of the second line current is provided such that the transition time of the magnetic field is shorter than the time required for the magnetization of the magnetoresistive memory cell to relax into a changed equilibrium state.

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Paris, France

Rok Dittrich