Western Digital Technologies, Inc.

Sandisk Technologies Inc.

Roi Kirshenbaum

Karin Inbar

Alexander Bazarsky

Ariel Navon

Nian Niles Yang

Philip David Reusswig

Idan Goldenberg

Rami Rom

Uri Peltz

Eran Sharon

Idan Alrod

Sergey Anatolievich Gorobets

Alan David Bennett

Einat Lev

Yigal Eli

Thomas Hugh Shippey

Ofer Sharon

An apparatus includes a non-volatile memory and a controller coupled to the non-volatile memory. The controller includes an interface configured to send first data to be stored to the non-volatile memory. The controller further includes a control circuit configured to generate updated control information based on storing of the first data to the non-volatile memory. The interface is further configured to concurrently send second data and the updated control information to be stored at the non-volatile memory. The non-volatile memory is configured to store the second data and the updated control information in a non-blocking manner

Techniques for performing a non-blocking control sync operation

Systems and methods are described for compacting operating parameter sets in a data storage device. Data storage device may be configured to maintain multiple operating parameter sets, each of which stores various parameters for interacting with different memory elements within the device. The data storage device may further be limited in the total number of operating parameter sets that can be maintained in the device at any given time. Thus, the data storage device may be required at various times to combine two or more operating parameter sets, to enable creation of a new operating parameter set. Because each operating parameter set can contain a number of parameters, identification of similar sets for combination can be computationally intensive. To identify similar sets in an efficient manner, a device as disclosed herein is enabled to reduce a dimensionality of each set, and locate similar sets under that reduced dimensionality.

Compacting operating parameter groups in solid state memory devices

Systems and methods are described for generating location-based read voltage offsets in a data storage device. Optimal read voltage thresholds vary across memory elements of a device. However, data storage devices are often limited in the number of read voltage thresholds that can be maintained in the device. Thus, it may not be possible to maintain optimal read voltage parameters for each memory element within a device. The systems and methods described herein provide for increased accuracy of read voltage thresholds when applied to memory elements within a specific location in a device, by enabling the use of location-based read voltage offsets, depending on a relative location of the memory element being read from. The read voltage offsets can be determined based on application of a neural network to data regarding optimal read voltage thresholds determined from at least a sample of memory elements in a device.

Operating parameter offsets in solid state memory devices

A device includes a non-volatile memory and a controller coupled to the non-volatile memory. The non-volatile memory includes a plurality of blocks and each block of the plurality of blocks includes a plurality of word lines. The controller is configured to receive data read from a word line of a block of the non-volatile memory and to determine an error indicator value based on the data. The controller is further configured to, responsive to the error indicator value satisfying a threshold, indicate that at least a portion of the word line is to be skipped during writing of second data to the block of the non-volatile memory.

Systems and methods of detecting errors during read operations and skipping word line portions

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Hod Hasharon, Israel

Roi Kirshenbaum