Intel Corporation

Case Western Reserve University

Illumina Corporation

Atotech Deutschland Gmbh

Tahoe Research, Ltd.

Rohan N Akolkar

Xinyu Liu

Kailash Venkatraman

James S Clarke

Valery M Dubin

Kevin O'Brien

Boyan Boyanov

Christopher J Jezewski

Steven Mark Barnard

Jeffrey G Mandell

Jeffrey S Fisher

Tejaswi K Indukuri

Sridhar Balakrishnan

Kevin P O'brien

Liangliang Qiang

Arnel M Fajardo

Hans-Jürgen Schreier

Philip Yashar

Jacob Blickensderfer

Paige Altemare

Kay-Oliver Thiel

Ruwani Wasalathanthri

Nicholas Sinclair

Benjamin P Holcombe

An anode for electrolytic chlorine evolution in a molten salt electrolyte includes a graphite substrate and a coating including a transition metal oxide disposed on at least a portion of the substrate.

Dimensionally stable anode for electrolytic chlorine evolution in molten salts

A sensor for detecting lead in an aqueous solution includes a copper working electrode, a counter electrode, a power supply for applying underpotential deposition of lead onto the copper electrode, a measuring device for providing measurement of a hydrogen evolution reaction (HER) current on the Pb-modified electrode, and a controller configured to correlate the degree of suppression of the HER current to Pbcoverage to determine the lead coverage and lead concentration of the solution.

Electrochemical sensor for lead detection

Example nanopore sequencers include a cis well, a trans well, and a nanopore fluidically connecting the cis and trans wells. In one example sequencer, a modified electrolyte (including an electrolyte and a cation complexing agent) is present in the cis well, or the trans well, or in the cis and the trans wells. In another example sequencer, a gel state polyelectrolyte is present in the cis well, or the trans well, or in the cis and the trans wells.

Nanopore sequencers

A sensor for detecting lead in an aqueous solution includes a copper working electrode, a counter electrode, a power supply for applying underpotential deposition of lead onto the copper electrode from the aqueous solution, a measuring device for providing measurement of a hydrogen evolution reaction (HER) current on the Pb-modified electrode, and a means for correlating the degree of suppression of the HER current to Pbcoverage to determine the lead coverage and lead concentration of the solution.

An aqueous plating bath for the electroless deposition of iron boron alloy coatings, characterized in that it comprises at least one iron ion source, at least one boron based reducing agent, at least one complexing agent, at least one pH buffer and at least one base wherein its pH value is 11 or higher and the molar ratio of the boron based reducing agents in relation to the iron ions in the aqueous plating bath is at least 6:1. Also, a process for the use of said aqueous plating bath is disclosed. The aqueous plating bath according to the invention shows good stability and plating rate and yields glossy and homogeneous iron boron alloy coatings on various substrates. It is an advantage of the plating bath that it does not require any sacrificial anodes.

Iron boron alloy coatings and a process for their preparation

Methods and an apparatus are described for an integrated circuit within which an electroless Cu plated layer having an oxygen content is formed on the top of a seed layer comprising Cu and Mn. The integrated circuit is then exposed to a sufficient high temperature to cause the self-formation of a MnSiOx barrier layer.

Electroless Cu plating for enhanced self-forming barrier layers

Methods for fabricating integrated circuit electrical interconnects and electrical interconnects are provided. Methods include providing a substrate having a surface, the surface having a feature formed therein wherein the feature is a trench or via, depositing a metal layer, the metal of the metal layer being selected from the group consisting of Ru, Co, Pt, Ir, Pd, Re, and Rh, onto surfaces of the feature, depositing a copper seed layer wherein the copper seed layer comprises a dopant and the dopant is selected from the group consisting of Mn, Mg, MgB. P, B, Al, Co and combinations thereof, onto the metal layer, and depositing copper into the feature. Devices comprising copper interconnects having metal liner layers are provided. Devices having liner layers comprising ruthenium are provided.

Barrier layers

Embodiments of apparatus and methods for forming dual metal interconnects are described herein. Other embodiments may be described and claimed.

Dual metal interconnects for improved gap-fill, reliability, and reduced capacitance

A method comprising forming an interconnection opening through a dielectric material to a contact point; and electroplating a interconnection comprising copper in the contact opening using an electroplating bath comprising an alkoxylated sulfopropylated alkylamine. A method comprising forming an interconnection opening through a dielectric material to a contact point; lining the interconnection opening with a barrier layer and a seed layer; and electroplating an interconnection comprising copper in the contact opening using an electroplating bath comprising an alkoxylated sulfopropylated alkylamine.

Electroplating chemistries and methods of forming interconnections

Growing community of inventors

Hillsboro, OR, United States of America

Rohan N Akolkar