Agere Systems Inc.

Roger W Key

Daniel Charles Kerr

Michael Scott Carroll

Amal Ma Hamad

Thiet The Lai

Alan Sangone Chen

William A Russell

Bradley J Albers

A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.

Multiple doping level bipolar junctions transistors and method for forming

Method for forming multiple doping level bipolar junctions transistors

A resistor formed on a material layer of a semiconductor integrated circuit and a method for forming the resistor. The resistor comprises a region of resistive material with a plurality of conductive contacts or plugs in electrical contact with and extending away from the resistive material. A first and a second interconnect line are formed overlying the plugs and in conductive contact with one or more of the plurality of plugs, such that a portion of the resistive material between the first and the second interconnect lines provides a desired resistance. According to a method of the present invention, the plurality of conductive contacts are formed using a first photolithographic mask and the first and the second interconnect lines are formed using a second photolithographic mask. The desired resistance is changed by modifying the first or the second mask such that one or more dimensions of a region of the resistive material between the first and the second interconnect lines is altered.

Structure and method for adjusting integrated circuit resistor value

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Orlando, FL, United States of America

Roger W Key