Qinetiq Limited

The Secretary of State for Defence in Her Britannic Majesty's Government

The Secretary of State for Defence

Roger Timothy Carline

David John Robbins

John M Heaton

David R Wight

Weng Y Leong

Armando Loni

David C W Herbert

Christopher Pickering

Edward T R Chidley

An optical element () is mechanically retained within a slot of () in a rigid substrate (), e.g. of a ceramic or crystalline material, by contact with the sides of the slot. Where the difference between a dimension of the optical element and the slot width at ambient temperature is a very small and positive, it may be removed by heating the substrate and/or cooling the element (differential thermal expansion) to allow insertion of the element. Then the temperature difference is removed so that the element is mechanically retained under compression by the slot sides. Alternatively, where the element may be directly inserted so that it is in contact with or immediately adjacent the slot wall, the material of the substrate and/or the optical element is the oxidized in the region of contact so as to increase the dimension of the oxidized material and mechanically retain the element. Either technique is applicable to parallel sides slots, but the element may be additionally or alternatively mechanically retained by shaping the edges of the slot. The fibre () shown may be butted against a second fibre, or coupled to a guide or other element within the substrate.

Mounting of optical components

A horizontal access semiconductor photo detector () comprises a horizontal light absorbing layer () for converting light into photo-current which layer is configured to confine light within it in whispering gallery modes of propagation. The detector is configured to have a first waveguide portion () and a second light confining portion () arranged such that the waveguide portion couples light into the detector and transfers light into the light confining portion so as to excite whispering gallery modes of propagation around the light confining portion. The light absorbing layer may be part of the light confining portion or alternatively light can be coupled into the light confining portion or alternatively light can be coupled into the light absorbing layer from the light confining portion by evanescent coupling. The excitation of whispering gallery modes within the light absorbing layer significantly increases the effective absorption coefficient of the light absorbing layer.

Horizontal access semiconductor photo detector

A method of monitoring material parameters of a sample ( ) (for example electrical properties of a semiconductor) during processing (for example during manufacture) which uses ellipsometric techniques to study the changes induced in the ellipsometric spectra of the material, by modulation of the internal electric field of the material, and determining from these changes the material parameters of interest The means of modulation can be a source of electromagnetic radiation, for example a laser ( ). The ellipsometer used may include an array of photodetectors. The process allows the real time monitoring of the process under examination.

In-situ monitoring of electrical properties by ellipsometry

Semiconductor substrate for reflecting electromagnetic radiation within

Growing community of inventors

Malvern, United Kingdom

Roger Timothy Carline